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Half-Quantized Chiral Edge Current in a $C = 1 / 2$ Parity Anomaly State

https://doi.org/10.1103/vxcb-rwbl

Zhuo, Deyi; Zhang, Bomin; Zhou, Humian; Tay, Han; Liu, Xiaoda; Xi, Zhiyuan; Chen, Chui-Zhen; Chang, Cui-Zu (January 2026, Physical Review Letters)

Free, publicly-accessible full text available January 1, 2027
Gate-Tunable Ambipolar Josephson Current in a Topological Insulator

https://doi.org/10.1021/acs.nanolett.5c04854

Zhang, Bomin; Liu, Xiaoda; Qi, Junjie; Zhou, Ling-Jie; Zhuo, Deyi; Tay, Han; Rong, Hongtao; Wang, Annie G; Xi, Zhiyuan; Liu, Chao-Xing; et al (December 2025, Nano Letters)

Free, publicly-accessible full text available December 17, 2026
Orbital-hybridization-induced Ising-type superconductivity in a confined gallium layer

https://doi.org/10.1038/s41563-026-02573-y

Yi, Hemian; Liu, Yunzhe; Dong, Chengye; Yang, Yiheng; Yan, Zi-Jie; Wang, Zihao; Zhou, Lingjie; Wu, Dingsong; Chen, Houke; Paolini, Stephen; et al (April 2026, Nature Materials)

Free, publicly-accessible full text available April 13, 2027
DNA-based doping and fabrication of PN diodes

https://doi.org/10.3389/fnano.2024.1291328

Bai, Ruobing; Liu, Yihan; Zhang, Bomin; Chen, Beishan; Xiong, Feng; Liu, Haitao (February 2024, Frontiers in Nanotechnology)

This paper reports the fabrication of silicon PN diode by using DNA nanostructure as the etching template for SiO₂and also as then-dopant of Si. DNA nanotubes were deposited ontop-type silicon wafer that has a thermal SiO₂layer. The DNA nanotubes catalyze the etching of SiO₂by HF vapor to expose the underlying Si. The phosphate groups in the DNA nanotube were used as the doping source to locallyn-dope the Si wafer to form vertical P-N junctions. Prototype PN diodes were fabricated and exhibited expected blockage behavior with a knee voltage ofca.0.7 V. Our work highlights the potential of DNA nanotechnology in future fabrication of nanoelectronics.
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