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  1. null (Ed.)
    We use polarization-resolved electronic Raman spectroscopy to study quadrupolar charge dynamics in a nonmagnetic F e S e 1 − x S x superconductor. We observe two types of long-wavelength X Y symmetry excitations: 1) a low-energy quasi-elastic scattering peak (QEP) and 2) a broad electronic continuum with a maximum at 55 meV. Below the tetragonal-to-orthorhombic structural transition at T S ( x ) , a pseudogap suppression with temperature dependence reminiscent of the nematic order parameter develops in the X Y symmetry spectra of the electronic excitation continuum. The QEP exhibits critical enhancement upon cooling toward T S ( x ) . The intensity of the QEP grows with increasing sulfur concentration x and maximizes near critical concentration x c r ≈ 0.16 , while the pseudogap size decreases with the suppression of T S ( x ) . We interpret the development of the pseudogap in the quadrupole scattering channel as a manifestation of transition from the non-Fermi liquid regime, dominated by strong Pomeranchuk-like fluctuations giving rise to intense electronic continuum of excitations in the fourfold symmetric high-temperature phase, to the Fermi liquid regime in the broken-symmetry nematic phase where the quadrupole fluctuations are suppressed. 
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  2. Abstract

    Silanes are important in chemistry and material science. The self‐redistribution of HSiCl3is an industrial process to prepare SiH4, which is widely used in electronics and automobile industries. However, selective silane cross‐redistribution to prepare advanced silanes is challenging. We now report an enthalpy‐driven silane cross‐redistribution to access bis‐silanes that contain two different types of Si−H bonds in the same molecule. Compared with entropy‐driven reactions, the enthalpy‐driven reaction shows high regioselectivity, broad substrate scope (62 examples) and high atom economy. Our combined experimental and computational study indicates that the reaction proceeds through a Ni0‐NiII‐NiIVcatalytic cycle.

     
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  3. Abstract

    Silanes are important in chemistry and material science. The self‐redistribution of HSiCl3is an industrial process to prepare SiH4, which is widely used in electronics and automobile industries. However, selective silane cross‐redistribution to prepare advanced silanes is challenging. We now report an enthalpy‐driven silane cross‐redistribution to access bis‐silanes that contain two different types of Si−H bonds in the same molecule. Compared with entropy‐driven reactions, the enthalpy‐driven reaction shows high regioselectivity, broad substrate scope (62 examples) and high atom economy. Our combined experimental and computational study indicates that the reaction proceeds through a Ni0‐NiII‐NiIVcatalytic cycle.

     
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