Search for: All records

As liquid xenon detectors grow in scale, novel techniques are required to maintain sufficient purity for charges to survive across longer drift paths. The Xeclipse facility at Columbia University was built to test the removal of electronegative impurities through cryogenic filtration powered by a liquid xenon pump, enabling a far higher mass flow rate than gas-phase purification through heated getters. In this paper, we present results from Xeclipse, including measured oxygen removal rates for two sorbent materials, which were used to guide the design and commissioning of the XENONnT liquid purification system. Thanks to this innovation, XENONnT has achieved an electron lifetime greater than$${10}\,\hbox {ms}$$$10\text{ms}$in an$$\sim {8.6}{\text {tonne}}$$$\sim 8.6\text{tonne}$total mass, perhaps the highest purity ever measured liquid xenon detector.

In WSe2 intense THz fields are found to enhance transmission at 400 nm, while reducing it at 800 nm. The differential transmission is proportional to the field amplitude. The nonlinear responses are fast, yet non-adiabatic.

We demonstrate the underlying mechanism for one version of quantum-enhanced telescopy, using multiple interconnected Hong-Ou-Mandel interferometers to re-cover the visibility amplitude of the source of light in the presence of arbitrary turbulence.

The limited short circuit (SC) capability of GaN high-electron-mobility transistors (HEMTs) has become a critical concern for their adoption in many power applications. Recently, breakthrough SC robustness was demonstrated in a 650-V rated vertical GaN Fin-JFET with a short circuit withstanding time of over 30 µs at 400 V bus voltage (V BUS ), showing great potential for automotive powertrain and grid applications. This work presents the first study on the repetitive SC robustness of this GaN Fin-JFET at a V BUS of 400 V and 600 V. The GaN Fin-JFET survived 30,000 cycles of 400 V, 10 µs SC stresses without any degradation in device characteristics. At a 600 V V BUS , it survived over 8,000 cycles of 10 µs SC stresses before an open-circuit failure. This open-circuit failure signature allows the GaN Fin-JFET to retain its avalanche breakdown voltage and is highly desirable for system safety. Besides, an increase in gate leakage was observed during the 600 V repetitive test, which can be used as a precursor to predict device failure. As far as we know, this is the first report of an exceptional repetitive SC robustness in a power transistor at a V BUS close tomore »its rated voltage.« less