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The use of an alternating current (AC) voltage is a simple, versatile method of producing electroluminescence from generic emissive materials without the need for contact engineering. Recently, it was shown that AC‐driven, capacitive electroluminescent devices with carbon nanotube network contacts can be used to generate and study electroluminescence from a variety of molecular materials emitting in the infrared‐to‐ultraviolet range. Here, performance trade‐offs in these devices are studied through comprehensive device simulations and illustrative experiments, enhancing understanding of the mechanism and capability of electroluminescent devices based on alternating as opposed to direct current (DC) schemes. AC‐driven electroluminescent devices can overcome several limitations of conventional DC‐driven electroluminescent devices, including the requirement for proper alignment of material energy levels and the need to process emitting materials into uniform thin films. By simultaneously optimizing device geometry, driving parameters, and material characteristics, the performance of these devices can be tuned. Importantly, the turn‐on voltage of AC‐driven electroluminescent devices approaches the bandgap of the emitting material as the gate oxide thickness is scaled, and internally efficient electroluminescence can be achieved using low‐mobility single‐layer emitter films with varying thicknesses and energy barrier heights relative to the contact.

Scanning probe lithography is used to directly pattern monolayer transition metal dichalcogenides (TMDs) without the use of a sacrificial resist. Using an atomic‐force microscope, a negatively biased tip is brought close to the TMD surface. By inducing a water bridge between the tip and the TMD surface, controllable oxidation is achieved at the sub‐100 nm resolution. The oxidized flake is then submerged into water for selective oxide removal which leads to controllable patterning. In addition, by changing the oxidation time, thickness tunable patterning of multilayer TMDs is demonstrated. This resist‐less process results in exposed edges, overcoming a barrier in traditional resist‐based lithography and dry etch where polymeric byproduct layers are often formed at the edges. By patterning monolayers into geometric patterns of different dimensions and measuring the effective carrier lifetime, the non‐radiative recombination velocity due to edge defects is extracted. Using this patterning technique, it is shown that selenide TMDs exhibit lower edge recombination velocity as compared to sulfide TMDs. The utility of scanning probe lithography towards understanding material‐dependent edge recombination losses without significantly normalizing edge behaviors due to heavy defect generation, while allowing for eventual exploration of edge passivation schemes is highlighted, which is of profound interest for nanoscale electronics and optoelectronics.