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The advent of moiré platforms for engineered quantum matter has led to discoveries of integer and fractional quantum anomalous Hall effects, with predictions for correlation-driven topological states based on electron crystallization. Here, we report an array of trivial and topological insulators formed in a moiré lattice of rhomobohedral pentalayer graphene (R5G). At a doping of one electron per moiré unit cell ( $\nu =1$), we see a correlated insulator with a Chern number that can be tuned between $C=0$and $+1$by an electric displacement field. This is accompanied by a series of additional Chern insulators with $C=+1$originating from fractional fillings of the moiré lattice— $\nu =1/4$, $1/3$, and $2/3$—associated with the formation of moiré-driven topological electronic crystals. At $\nu =2/3$the system exhibits an integer quantum anomalous Hall effect at zero magnetic field, but further develops hints of an incipient $C=2/3$fractional Chern insulator in a modest field. Our results establish moiré R5G as a fertile platform for studying the competition and potential intertwining of integer and fractional Chern insulators. Published by the American Physical Society2025