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The use of magnetic tunnel junction (MTJ)-based devices constitutes an important basis of modern spintronics. However, the switching layer of an MTJ is widely believed to be an unmodifiable setup, instead of a user-defined option, posing a restriction to the function of spintronic devices. In this study, we realized a reliable electrical control of the switching layer in perpendicular MTJs with 0.1 nm Ir dusting. Specifically, a voltage pulse with a higher amplitude drives the magnetization switching of the MTJ's bottom electrode, while a lower voltage amplitude switches its top electrode. We discussed the origin of this controllability and excluded the possibility of back-hopping. Given the established studies on enhancing the voltage-controlled magnetic anisotropy effect by adopting Ir, we attribute this switching behavior to the significant diffusion of Ir atoms into the top electrode, which is supported by scanning transmission electron microscopy with atomic resolution.

As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA),L1₀‐FePd and its synthetic antiferromagnet (SAF) structure with large crystalline PMA can support spintronic devices with sufficient thermal stability at sub‐5 nm sizes. However, the compatibility requirement of preparingL1₀‐FePd thin films on Si/SiO₂wafers is still unmet. In this paper, high‐qualityL1₀‐FePd and its SAF on Si/SiO₂wafers are prepared by coating the amorphous SiO₂surface with an MgO(001) seed layer. The preparedL1₀‐FePd single layer and SAF stack are highly (001)‐textured, showing strong PMA, low damping, and sizeable interlayer exchange coupling, respectively. Systematic characterizations, including advanced X‐ray diffraction measurement and atomic resolution‐scanning transmission electron microscopy, are conducted to explain the outstanding performance ofL1₀‐FePd layers. A fully‐epitaxial growth that starts from MgO seed layer, induces the (001) texture ofL1₀‐FePd, and extends through the SAF spacer is observed. This study makes the vision of scalable spintronics more practical.