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Photons at microwave and optical frequencies are principal carriers for quantum information. While microwave photons can be effectively controlled at the local circuit level, optical photons can propagate over long distances. High-fidelity conversion between microwave and optical photons will allow the distribution of quantum states across different quantum technology nodes and enhance the scalability of hybrid quantum systems toward a future “Quantum Internet.” Despite a frequency difference of five orders of magnitude, there has been significant progress recently toward the transfer between microwave and optical photons with steadily improved efficiency in a coherent and bidirectional manner. In this review, we summarize this progress, emphasizing integrated device approaches, and provide a perspective for device implementation that enables quantum state transfer and entanglement distribution across microwave and optical domains. 

We report intracavity Bragg scattering induced by the photorefractive (PR) effect in high- $Q$lithium niobate ring resonators at cryogenic temperatures. We show that when a cavity mode is strongly excited, the PR effect imprints a long-lived periodic space-charge field. This residual field in turn creates a refractive index modulation pattern that dramatically enhances the back scattering of an incoming probe light, and results in selective and reconfigurable mode splittings. This PR-induced Bragg scattering effect, despite being undesired for many applications, could be utilized to enable optically programmable photonic components. 

Materials with strong second-order ( ${\mathrm{\chi <\#comment/>}}^{\left(2\right)}$) optical nonlinearity, especially lithium niobate, play a critical role in building optical parametric oscillators (OPOs). However, chip-scale integration of low-loss ${\mathrm{\chi <\#comment/>}}^{\left(2\right)}$materials remains challenging and limits the threshold power of on-chip ${\mathrm{\chi <\#comment/>}}^{\left(2\right)}$OPO. Here we report an on-chip lithium niobate optical parametric oscillator at the telecom wavelengths using a quasi-phase-matched, high-quality microring resonator, whose threshold power ( $\sim <\#comment/>30\text{µ<\#comment/>}\mathrm{W}$) is 400 times lower than that in previous ${\mathrm{\chi <\#comment/>}}^{\left(2\right)}$integrated photonics platforms. An on-chip power conversion efficiency of 11% is obtained from pump to signal and idler fields at a pump power of 93 µW. The OPO wavelength tuning is achieved by varying the pump frequency and chip temperature. With the lowest power threshold among all on-chip OPOs demonstrated so far, as well as advantages including high conversion efficiency, flexibility in quasi-phase-matching, and device scalability, the thin-film lithium niobate OPO opens new opportunities for chip-based tunable classical and quantum light sources and provides a potential platform for realizing photonic neural networks. 

Despite very efficient superconducting nanowire single-photon detectors (SNSPDs) reported recently, combining their other performance advantages such as high speed and ultralow timing jitter in a single device still remains challenging. In this work, we present a perfect absorber model and the corresponding detector design based on a micrometer-long NbN nanowire integrated with a 2D photonic crystal cavity of ultrasmall mode volume, which promises simultaneous achievement of near-unity absorption, gigahertz counting rates, and broadband optical response with a 3 dB bandwidth of 71 nm. Compared to previous stand-alone meandered and waveguide-integrated SNSPDs, this perfect absorber design addresses the trade space in size, efficiency, speed, and bandwidth for realizing large on-chip single-photon detector arrays.