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Charge density waves (CDWs) in the cuprate high-temperature superconductors have evoked much interest, yet their typical short-range nature has raised questions regarding the role of disorder. Here we report a resonant X-ray diffraction study of ZrTe$${}_{3}$$${}_3$, a model CDW system, with focus on the influence of disorder. Near the CDW transition temperature, we observe two independent signals that arise concomitantly, only to become clearly separated in momentum while developing very different correlation lengths in the well-ordered state that is reached at a distinctly lower temperature. Anomalously slow dynamics of mesoscopic charge domains are further found near the transition temperature, in spite of the expected strong thermal fluctuations. Our observations signify the presence of distinct experimental fingerprints of pristine and disorder-perturbed CDWs. We discuss the latter also in the context of Friedel oscillations, which we argue might promote CDW formation via a self-amplifying process.

Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. It is recently shown that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, the chemical profile of the surface of tantalum films grown on c‐plane sapphire using variable energy X‐ray photoelectron spectroscopy (VEXPS) is studied. The different oxidation states of tantalum that are present in the native oxide resulting from exposure to air are identified, and their distribution through the depth of the film is measured. Furthermore, it is shown how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. Correlating these measurements with detailed measurements of quantum devices may elucidate the underlying microscopic sources of loss.