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The past 75 years has been an exciting and dynamic time for solid-state electronic materials with advanced micro- and optoelectronic properties but point defects at semiconductor–metal interfaces that limit their operation have been a challenge to understand and control. These defects depend strongly on chemical structure at the intimate interface, and techniques have now developed to learn how their presence at nanoscale dimensions impact electronic structure at the macroscale. A combination of optical, electronic, and microscopic techniques can now enable new directions for defect research of metal–semiconductor interfaces at the nano/atomic scale. These nanoscale and atomic scale techniques can meet the experimental challenges inherent at this scale and create opportunities for new defect research of electronic material interfaces at a deeper level.

Graphical Abstract

 

While the properties of β-Ga2O3 continue to be extensively studied for high-power applications, the effects of strong electric fields on the Ga2O3 microstructure and, in particular, the impact of electrically active native point defects have been relatively unexplored. We used cathodoluminescence point spectra and hyperspectral imaging to explore possible nanoscale movements of electrically charged defects in Ga2O3 vertical trench power diodes and observed the spatial rearrangement of optically active defects under strong reverse bias. These observations suggest an unequal migration of donor-related defects in β-Ga2O3 due to the applied electric field. The atomic rearrangement and possible local doping changes under extreme electric fields in β-Ga2O3 demonstrate the potential impact of nanoscale device geometry in other high-power semiconductor devices.

 

Most high-quality quantum dots (QDs) are synthesized in the organic phase, and are often coated with polymers for use in aqueous biological environments. QDs can exhibit fluorescence losses during phase transfer, but evaluating underlying mechanisms ( e.g. , oxidation, surface etching, loss of colloidal stability) can be challenging because of variation in synthesis methods. Here, fluorescence stability of QDs encapsulated in block co-polymer (BCP) micelles was investigated as a function of BCP terminal functionalization ( i.e. , –OH, –COOH, and –NH 2 groups) and synthesis method ( i.e. , electrohydrodynamic emulsification-mediated selfassembly (EE-SA), sonication, and manual shaking). Fluorescence losses, fluorescence intensity, energy spectra, and surface composition were assessed using spectrofluorometry and cathodoluminescence spectroscopy (CL) with integrated X-ray photoemission spectroscopy (XPS). QDs passivated using charged BCPs exhibited 50–80% lower fluorescence intensity than those displaying neutral groups ( e.g. , –OH), which CL/XPS revealed to result from oxidation of surface Cd to CdO. Fluorescence losses were higher for processes with slow formation speed, but minimized in the presence of poly(vinyl alcohol) (PVA) surfactant. These data suggest slower BCP aggregation kinetics rather than electrostatic chain repulsion facilitated QD oxidation. Thus, polymer coating method and BCP structure influence QD oxidation during phase transfer and should be selected to maximize fast aggregation kinetics. 

A predicted type-II staggered band alignment with an approximately 1.4 eV valence band offset at the ZnGeN2/GaN heterointerface has inspired novel band-engineered III-N/ZnGeN2 heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown (ZnGe)1−xGa2xN2, for x = 0 and 0.06, and GaN using x-ray photoemission spectroscopy. The valence band of ZnGeN2 was found to lie 1.45–1.65 eV above that of GaN. This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For (ZnGe)0.94Ga0.12N2 the value was determined to be 1.29 eV, ∼10%–20% lower than that of ZnGeN2. The experimental determination of the large band offset between ZnGeN2 and GaN provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices.