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Abstract We investigate the spin-nonconserving relaxation channel of excitons by their couplings with phonons in two-dimensional transition metal dichalcogenides using ab initio approaches. Combining GW-Bethe–Salpeter equation method and density functional perturbation theory, we calculate the electron–phonon and exciton–phonon coupling matrix elements for the spin-flip scattering in monolayer WSe 2 , and further analyze the microscopic mechanisms influencing these scattering strengths. We find that phonons could produce effective in-plane magnetic fields which flip spin of excitons, giving rise to relaxation channels complimentary to the spin-conserving relaxation. Finally, we calculate temperature-dependent spin-flip exciton–phonon relaxation times. Our method and analysis can be generalized to study other two-dimensional materials and would stimulate experimental measurements of spin-flip exciton relaxation dynamics. 

Abstract Kagome materials have become solid grounds to study the interplay among geometry, topology, correlation, and magnetism. Recently, niobium halide semiconductors Nb 3 X 8 ( X  = Cl, Br, I) have been predicted to be two-dimensional magnets and these materials are also interesting for their breathing kagome geometry. However, experimental electronic structure studies of these promising materials are still lacking. Here, we report the spectroscopic evidence of flat and weakly dispersing bands in breathing-kagome semiconductor Nb 3 I 8 around 500 meV binding energy, which is well supported by our first-principles calculations. These bands originate from the breathing kagome lattice of niobium atoms and have niobium d -orbital character. They are found to be sensitive to the polarization of the incident photon beam. Our study provides insight into the electronic structure and flat band topology in an exfoliable kagome semiconductor, thereby providing an important platform to understand the interaction of geometry and electron correlations in two-dimensional materials. 

To process real-world datasets, modern data-parallel systems often require extremely large amounts of memory, which are both costly and energy inefficient. Emerging non-volatile memory (NVM) technologies offer high capacity compared to DRAM and low energy compared to SSDs. Hence, NVMs have the potential to fundamentally change the dichotomy between DRAM and durable storage in Big Data processing. However, most Big Data applications are written in managed languages and executed on top of a managed runtime that already performs various dimensions of memory management. Supporting hybrid physical memories adds a new dimension, creating unique challenges in data replacement. This article proposes Panthera, a semantics-aware, fully automated memory management technique for Big Data processing over hybrid memories. Panthera analyzes user programs on a Big Data system to infer their coarse-grained access patterns, which are then passed to the Panthera runtime for efficient data placement and migration. For Big Data applications, the coarse-grained data division information is accurate enough to guide the GC for data layout, which hardly incurs overhead in data monitoring and moving. We implemented Panthera in OpenJDK and Apache Spark. Based on Big Data applications’ memory access pattern, we also implemented a new profiling-guided optimization strategy, which is transparent to applications. With this optimization, our extensive evaluation demonstrates that Panthera reduces energy by 32–53% at less than 1% time overhead on average. To show Panthera’s applicability, we extend it to QuickCached, a pure Java implementation of Memcached. Our evaluation results show that Panthera reduces energy by 28.7% at 5.2% time overhead on average. 

Excitons are elementary optical excitation in semiconductors. The ability to manipulate and transport these quasiparticles would enable excitonic circuits and devices for quantum photonic technologies. Recently, interlayer excitons in 2D semiconductors have emerged as a promising candidate for engineering excitonic devices due to their long lifetime, large exciton binding energy, and gate tunability. However, the charge-neutral nature of the excitons leads to weak response to the in-plane electric field and thus inhibits transport beyond the diffusion length. Here, we demonstrate the directional transport of interlayer excitons in bilayer WSe₂driven by the propagating potential traps induced by surface acoustic waves (SAW). We show that at 100 K, the SAW-driven excitonic transport is activated above a threshold acoustic power and reaches 20 μm, a distance at least ten times longer than the diffusion length and only limited by the device size. Temperature-dependent measurement reveals the transition from the diffusion-limited regime at low temperature to the acoustic field-driven regime at elevated temperature. Our work shows that acoustic waves are an effective, contact-free means to control exciton dynamics and transport, promising for realizing 2D materials-based excitonic devices such as exciton transistors, switches, and transducers up to room temperature.