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Directed self-assembly of block copolymers (BCPs) enables nanofabrication at sub-10 nm dimensions, beyond the resolution of conventional lithography. However, directing the position, orientation, and long-range lateral order of BCP domains to produce technologically-useful patterns is a challenge. Here, we present a promising approach to direct assembly using spatial boundaries between planar, low-resolution regions on a surface with different composition. Pairs of boundaries are formed at the edges of isolated stripes on a background substrate. Vertical lamellae nucleate at and are pinned by chemical contrast at each stripe/substrate boundary, align parallel to boundaries, selectively propagate from boundaries into stripe interiors (whereas horizontal lamellae form on the background), and register to wide stripes to multiply the feature density. Ordered BCP line arrays with half-pitch of 6.4 nm are demonstrated on stripes >80 nm wide. Boundary-directed epitaxy provides an attractive path towards assembling, creating, and lithographically defining materials on sub-10 nm scales.

Although hydrogen embrittlement has been observed and extensively studied in a wide variety of metals and alloys, there still exist controversies over the underlying mechanisms and a fundamental understanding of hydrogen embrittlement in nanostructures is almost non-existent. Here we use metallic nanowires (NWs) as a platform to study hydrogen embrittlement in nanostructures where deformation and failure are dominated by dislocation nucleation. Based on quantitative in-situ transmission electron microscopy nanomechanical testing and molecular dynamics simulations, we report enhanced yield strength and a transition in failure mechanism from distributed plasticity to localized necking in penta-twinned Ag NWs due to the presence of surface-adsorbed hydrogen. In-situ stress relaxation experiments and simulations reveal that the observed embrittlement in metallic nanowires is governed by the hydrogen-induced suppression of dislocation nucleation at the free surface of NWs.

The emergence of memristive behavior in amorphous–crystalline 2D oxide heterostructures, which are synthesized by atomic layer deposition (ALD) of a few‐nanometer amorphous Al₂O₃layers onto atomically thin single‐crystalline ZnO nanosheets, is demonstrated. The conduction mechanism is identified based on classic oxygen vacancy conductive channels. ZnO nanosheets provide a 2D host for oxygen vacancies, while the amorphous Al₂O₃facilitates the generation and stabilization of the oxygen vacancies. The conduction mechanism in the high‐resistance state follows Poole–Frenkel emission, and in the the low‐resistance state is fitted by the Mott–Gurney law. From the slope of the fitting curve, the mobility in the low‐resistance state is estimated to be ≈2400 cm²V⁻¹s⁻¹, which is the highest value reported in semiconductor oxides. When annealed at high temperature to eliminate oxygen vacancies, Al is doped into the ZnO nanosheet, and the memristive behavior disappears, further confirming the oxygen vacancies as being responsible for the memristive behavior. The 2D heterointerface offers opportunities for new design of high‐performance memristor devices.