skip to main content


Search for: All records

Creators/Authors contains: "Choi, Eun-Sang"

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

  1. Free, publicly-accessible full text available April 1, 2024
  2. Free, publicly-accessible full text available April 1, 2024
  3. Abstract

    Anomalous transport of topological semimetals has generated significant interest for applications in optoelectronics, nanoscale devices, and interconnects. Understanding the origin of novel transport is crucial to engineering the desired material properties, yet their orders of magnitude higher transport than single‐particle mobilities remain unexplained. This work demonstrates the dramatic mobility enhancements result from phonons primarily returning momentum to electrons due to phonon‐electron dominating over phonon–phonon scattering. Proving this idea, proposed by Peierls in 1932, requires tuning electron and phonon dispersions without changing symmetry, topology, or disorder. This is achieved by combining de Haas ‐ van Alphen (dHvA), electron transport, Raman scattering, and first‐principles calculations in the topological semimetals MX2(M = Nb, Ta and X = Ge, Si). Replacing Ge with Si brings the transport mobilities from an order magnitude larger than single particle ones to nearly balanced. This occurs without changing the crystal structure or topology and with small differences in disorder or Fermi surface. Simultaneously, Raman scattering and first‐principles calculations establish phonon–electron dominated scattering only in the MGe2compounds. Thus, this study proves that phonon‐drag is crucial to the transport properties of topological semimetals and provides insight to engineer these materials further.

     
    more » « less
  4. Abstract We report the superconductivity of the topological nodal-line semimetal candidate Sn x NbSe 2- δ with a noncentrosymmetric crystal structure. The superconducting transition temperature T c of Sn x NbSe 2- δ drastically varies with the Sn concentration x and the Se deficiency δ , and reaches 12 K, relatively higher than those of known topological superconductors. The upper critical field of this compound shows unusual temperature dependence, inconsistent with the WHH theory for conventional type-II superconductors. In a low-T c sample, the zero-temperature limit of the upper critical field parallel to the ab plane exceeds the Pauli paramagnetic limit estimated from the simple BCS weak coupling model by a factor of ∼ 2, suggestive of unusual superconductivity stabilized in Sn x NbSe 2- δ . Together with the robust superconductivity against disorder, these observations indicate that Sn x NbSe 2- δ is a promising candidate to explore topological superconductivity. 
    more » « less
  5. Metal-metal bonding interactions can engender outstanding magnetic properties in bulk materials and molecules, and examples abound for the transition metals. Extending this paradigm to the lanthanides, herein we report mixed-valence dilanthanide complexes (Cp iPr5 ) 2 Ln 2 I 3 (Ln is Gd, Tb, or Dy; Cp i Pr5 , pentaisopropylcyclopentadienyl), which feature a singly occupied lanthanide-lanthanide σ-bonding orbital of 5 d z 2 parentage, as determined by structural, spectroscopic, and computational analyses. Valence delocalization, wherein the d electron is equally shared by the two lanthanide centers, imparts strong parallel alignment of the σ-bonding and f electrons on both lanthanides according to Hund’s rules. The combination of a well-isolated high-spin ground state and large magnetic anisotropy in (Cp iPr5 ) 2 Dy 2 I 3 gives rise to an enormous coercive magnetic field with a lower bound of 14 tesla at temperatures as high as 60 kelvin. 
    more » « less
  6. null (Ed.)
  7. null (Ed.)
  8. null (Ed.)
  9. null (Ed.)