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Reactions of the bicompartmental bis(phenolato) compound 6,6′-methylenebis(2-((bis(pyridin-2-ylmethyl)amino)methyl)-4-chlorophenol)hemihydrate (H 2 L ½H 2 O) with 3d metal( ii ) ions afforded novel fully structurally characterized bridged acetato dinuclear complexes [Mn 2 (HL)(μ 1,2 -OAc) 2 ]PF 6 (1) [Zn 2 (HL)(μ 1,2 -OAc)(H 2 O) 0.75 (MeOH) 0.25 ](PF 6 ) 2 ·0.45(H 2 O) (5) and [Cd 2 (HL)(μ 1,1,2 -OAc)(OAc)(H 2 O)]PF 6 ·H 2 O (6) as well as the polymeric bridged-azido tetranuclear catena -[Cu 4 (HL) 2 (μ 1,1 -N 3 ) 2 (μ 1,3 -N 3 ) 2 ](NO 3 ) 2 ·5H 2 O (4). The complex [Cu 4 (HL) 2 (ClO 4 ) 3 (H 2 O) 5 ](ClO 4 ) 3 ·5H 2 O (2) was partially characterized. In addition, three more dinuclear complexes [Cu 2 (H 2 L)(NO 3 ) 2 (H 2 O) 2 ](NO 3 ) 2 (3), [Cu 2 (HL)(OAc)(CH 3 OH)](PF 6 ) 2 (7) and [Cu 2 (HL)(NCS) 2 ]NO 3 ·2H 2 O (8) were also isolated. All complexes were characterized by CHN elemental analysis, IR and UV-Vis spectroscopy, ESI-MS, conductivity measurements and X-ray single crystal crystallography for compounds 1, 4, 5 and 6, where the bis(phenolato) ligand displayed different deprotonation (H 2 L, HL − and L 2− ). The magnetic susceptibility measurements over the temperature range 2–300 K revealed very weak antiferromagnetic coupling in dimanganese( ii ) 1 ( J = −1.64(1) cm −1 ) and almost negligible magnetic interaction in dicopper( ii ) 2 ( J = 0(3) cm −1 ). In the azido catena -[Cu 4 (HL) 2 (μ 1,1 -N 3 ) 2 (μ 1,3 -N 3 ) 2 ](NO 3 ) 2 ·5H 2 O (4) complex, the J value of −133(3) cm −1 was obtained upon moderate-to-strong antiferromagnetic coupling through the di-μ 1,3 -N 3 -bridged dicopper( ii ) unit with no magnetic interaction between the two copper( ii ) ions in the di-μ 1,1 -N 3 -bridged unit. 

A thin layer of Al 2 O 3 was employed as an interfacial layer between surface conductive hydrogen-terminated (H-terminated) diamond and MoO 3 to increase the distance between the hole accumulation layer in diamond and negatively charged states in the acceptor layer and, thus, reduce the Coulomb scattering and increase the hole mobility. The valence band offsets are found to be 2.7 and 3.1 eV for Al 2 O 3 /H-terminated diamond and MoO 3 /H-terminated diamond, respectively. Compared to the MoO 3 /H-terminated diamond structure, a higher hole mobility was achieved with Al 2 O 3 inserted as an interface layer. This work provides a strategy to achieve increased hole mobility of surface conductive diamond by using optimal interlayer along with high high electron affinity surface acceptor materials.