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  1. The interface between two different materials can show unexpected quantum phenomena. In this study, we used molecular beam epitaxy to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We observed emergent interface-induced superconductivity in these heterostructures and demonstrated the co-occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer—the three essential ingredients of chiral topological superconductivity (TSC). The unusual coexistence of ferromagnetism and superconductivity is accompanied by a high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. These magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics. 
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    Free, publicly-accessible full text available February 9, 2025
  2. Free, publicly-accessible full text available May 1, 2024
  3. Abstract

    Non‐collinear antiferromagnets (AFMs) are an exciting new platform for studying intrinsic spin Hall effects (SHEs), phenomena that arise from the materials’ band structure, Berry phase curvature, and linear response to an external electric field. In contrast to conventional SHE materials, symmetry analysis of non‐collinear antiferromagnets does not forbid non‐zero longitudinal and out‐of‐plane spin currents with polarization and predicts an anisotropy with current orientation to the magnetic lattice. Here, multi‐component out‐of‐plane spin Hall conductivities are reported in L12‐ordered antiferromagnetic PtMn3thin films that are uniquely generated in the non‐collinear state. The maximum spin torque efficiencies (ξ  =JS /Je ≈ 0.3) are significantly larger than in Pt (ξ  ≈  0.1). Additionally, the spin Hall conductivities in the non‐collinear state exhibit the predicted orientation‐dependent anisotropy, opening the possibility for new devices with selectable spin polarization. This work demonstrates symmetry control through the magnetic lattice as a pathway to tailored functionality in magnetoelectronic systems.

     
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