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  1. Free, publicly-accessible full text available May 4, 2024
  2. The recent discovery of van der Waals (vdW) ferroelectric materials has inspired their incorporation into numerous nonvolatile technologies and shown potential promise for various device applications. Here in this perspective, we evaluate the recent developments in the field of vdW ferroelectric devices, with discussions focusing on vdW heterostructure ferroelectric field-effect transistors and vdW ferroelectric memristor technologies. Additionally, we discuss some of the many open questions that persist in these technologies and possible pathways research can take to answer these questions and further advance the understanding of vdW ferroelectric materials. 
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  3. Abstract

    Utilizing the unique in‐plane/out‐of‐plane polarization coupling in ferroelectric van der Waals α‐In2Se3, ferroelectric‐polarization‐controlled electrical conductance modulation in two‐dimensional (2D) MoS2with a large dynamic range of over 5 orders of magnitude and excellent non‐volatility is demonstrated. This highly efficient control of the electrical conductance is facilitated by enhanced capacitive coupling through atomic‐layer‐deposition‐grown Al2O3as the dielectric medium. By varying the in‐plane poling bias to the ferroelectric α‐In2Se3, the electrical conductance of vertically stacked 2D MoS2can be tuned continuously. This approach enables simplified device design and provides great flexibility in device integrations, and it can be applied in principle to manipulate the electronic states in any 2D semiconductors for various applications such as transistors, tunneling devices, and reconfigurable electronics. The results also provide insight into the ferroelectric polarization screening by ambient chemical species, highlighting the need for surface passivation, and/or device encapsulations.

     
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  4. null (Ed.)