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The ability to produce atomically precise, artificial oxide heterostructures allows for the possibility of producing exotic phases and enhanced susceptibilities not found in parent materials. Typical ferroelectric materials either exhibit large saturation polarization away from a phase boundary or large dielectric susceptibility near a phase boundary. Both large ferroelectric polarization and dielectric permittivity are attained wherein fully epitaxial (PbZr_0.8Ti_0.2O₃)_n/(PbZr_0.4Ti_0.6O₃)_2n(n= 2, 4, 6, 8, 16 unit cells) superlattices are produced such that the overall film chemistry is at the morphotropic phase boundary, but constitutive layers are not. Long‐ (n≥ 6) and short‐period (n= 2) superlattices reveal large ferroelectric saturation polarization (P_s= 64 µC cm⁻²) and small dielectric permittivity (ε_r≈ 400 at 10 kHz). Intermediate‐period (n= 4) superlattices, however, exhibit both large ferroelectric saturation polarization (P_s= 64 µC cm⁻²) and dielectric permittivity (ε_r= 776 at 10 kHz). First‐order reversal curve analysis reveals the presence of switching distributions for each parent layer and a third, interfacial layer wherein superlattice periodicity modulates the volume fraction of each switching distribution and thus the overall material response. This reveals that deterministic creation of artificial superlattices is an effective pathway for designing materials with enhanced responses to applied bias.

The manipulation of charge and lattice degrees of freedom in atomically precise, low‐dimensional ferroelectric superlattices can lead to exotic polar structures, such as a vortex state. The role of interfaces in the evolution of the vortex state in these superlattices (and the associated electrostatic and elastic boundary conditions they produce) has remained unclear. Here, the toroidal state, arranged in arrays of alternating clockwise/counterclockwise polar vortices, in a confined SrTiO₃/PbTiO₃/SrTiO₃trilayer is investigated. By utilizing a combination of transmission electron microscopy, synchrotron‐based X‐ray diffraction, and phase‐field modeling, the phase transition as a function of layer thickness (number of unit cells) demonstrates how the vortex state emerges from the ferroelectric state by varying the thickness of the confined PbTiO₃layer. Intriguingly, the vortex state arises at head‐to‐head domain boundaries in ferroelectrica₁/a₂twin structures. In turn, by varying the total number of PbTiO₃layers (moving from trilayer to superlattices), it is possible to manipulate the long‐range interactions among multiple confined PbTiO₃layers to stabilize the vortex state. This work provides a new understanding of how the different energies work together to produce this exciting new state of matter and can contribute to the design of novel states and potential memory applications.

Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high‐speed electronics, on the other hand, usually demand operation frequencies in the gigahertz (GHz) regime, where the effect of dipolar oscillation is important. Herein, an unexpected giant GHz conductivity on the order of 10³S m⁻¹is observed in certain BiFeO₃DWs, which is about 100 000 times greater than the carrier‐induced direct current (dc) conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the alternating current (ac) conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out‐of‐plane microwave fields and induce power dissipation, which is confirmed by the phase‐field modeling. Since the contributions from mobile‐carrier conduction and bound‐charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano‐devices for radio‐frequency applications.