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Abstract We present room-temperature measurements of magnon spin diffusion in epitaxial ferrimagnetic insulator MgAl 0.5 Fe 1.5 O 4 (MAFO) thin films near zero applied magnetic field where the sample forms a multi-domain state. Due to a weak uniaxial magnetic anisotropy, the domains are separated primarily by 180° domain walls. We find, surprisingly, that the presence of the domain walls has very little effect on the spin diffusion – nonlocal spin transport signals in the multi-domain state retain at least 95% of the maximum signal strength measured for the spatially-uniform magnetic state, over distances at least five times the typical domain size. This result is in conflict with simple models of interactions between magnons and static domain walls, which predict that the spin polarization carried by the magnons reverses upon passage through a 180° domain wall. 

Strain is powerful for discovery and manipulation of new phases of matter; however, elastic strains accessible to epitaxial films and bulk crystals are typically limited to small ( < 2 %), uniform, and often discrete values. This Perspective highlights emerging directions for strain and strain gradient engineering in free-standing single-crystalline membranes of quantum materials. Membranes enable large ( ∼ 10 %), continuously tunable strains and strain gradients via bending and rippling. Moreover, strain gradients break inversion symmetry to activate polar distortions, ferroelectricity, chiral spin textures, superconductivity, and topological states. Recent advances in membrane synthesis by remote epitaxy and sacrificial etch layers enable extreme strains in transition metal oxides, intermetallics, and Heusler compounds, expanding beyond the natively van der Waals (vdW) materials like graphene. We highlight emerging opportunities and challenges for strain and strain gradient engineering in membranes of non-vdW materials. 

Controlling magnetization dynamics is imperative for developing ultrafast spintronics and tunable microwave devices. However, the previous research has demonstrated limited electric-field modulation of the effective magnetic damping, a parameter that governs the magnetization dynamics. Here, we propose an approach to manipulate the damping by using the large damping enhancement induced by the two-magnon scattering and a nonlocal spin relaxation process in which spin currents are resonantly transported from antiferromagnetic domains to ferromagnetic matrix in a mixed-phased metallic alloy FeRh. This damping enhancement in FeRh is sensitive to its fraction of antiferromagnetic and ferromagnetic phases, which can be dynamically tuned by electric fields through a strain-mediated magnetoelectric coupling. In a heterostructure of FeRh and piezoelectric PMN-PT, we demonstrated a more than 120% modulation of the effective damping by electric fields during the antiferromagnetic-to-ferromagnetic phase transition. Our results demonstrate an efficient approach to controlling the magnetization dynamics, thus enabling low-power tunable electronics. 

Spin electronic devices based on crystalline oxide layers with nanoscale thicknesses involve complex structural and magnetic phenomena, including magnetic domains and the coupling of the magnetism to elastic and plastic crystallographic distortion. The magnetism of buried nanoscale layers has a substantial impact on spincaloritronic devices incorporating garnets and other oxides exhibiting the spin Seebeck effect (SSE). Synchrotron hard x-ray nanobeam diffraction techniques combine structural, elemental, and magnetic sensitivity and allow the magnetic domain configuration and structural distortion to be probed in buried layers simultaneously. Resonant scattering at the Gd L 2 edge of Gd 3 Fe 5 O 12 layers yields magnetic contrast with both linear and circular incident x-ray polarization. Domain patterns facet to form low-energy domain wall orientations but also are coupled to elastic features linked to epitaxial growth. Nanobeam magnetic diffraction images reveal diverse magnetic microstructure within emerging SSE materials and a strong coupling of the magnetism to crystallographic distortion.