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  1. Abstract

    Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB) centers, are emerging candidates for quantum sensing. However, the VBdefects suffer from low quantum efficiency and, as a result, exhibit weak photoluminescence. In this work, a scalable approach is demonstrated to dramatically enhance the VBemission by coupling to a plasmonic gap cavity. The plasmonic cavity is composed of a flat gold surface and a silver cube, with few‐layer hBN flakes positioned in between. Employing these plasmonic cavities, two orders of magnitude are extracted in photoluminescence enhancement associated with a corresponding twofold enhancement in optically detected magnetic resonance contrast. The work will be pivotal to progress in quantum sensing employing 2D materials, and in realization of nanophotonic devices with spin defects in hexagonal boron nitride.

     
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  2. Abstract

    Integrated quantum photonic circuitry is an emerging topic that requires efficient coupling of quantum light sources to waveguides and optical resonators. So far, great effort is devoted to engineering on‐chip systems from 3D crystals such as diamond or gallium arsenide. In this study, room‐temperature coupling is demonstrated of quantum emitters embedded in layered hexagonal boron nitride to an on‐chip aluminum nitride waveguide. 1.35% light coupling efficiency is achieved in the device and transmission of single photons through the waveguide is demonstrated. The results serve as foundation for integrating layered materials to on‐chip components and realizing integrated quantum photonic circuitry.

     
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