Search for: All records

The advent of a new vacuum ultraviolet (VUV) spectroscopic absorption detector for gas chromatography has enabled applications in many areas. Theoretical simulations of VUV spectra using computational chemistry can aid the new technique in situations where experimental spectra are unavailable. In this study, VUV spectral simulations of paraffin, isoparaffin, olefin, naphthene, and aromatic (PIONA) compounds using time-dependent density functional theory (TDDFT) methods were investigated. Important factors for the simulations, such as functionals/basis sets and formalism of oscillator strength calculations, were examined and parameters for future PIONA compound simulations were obtained by fitting computational results to experimental spectra. The simulations produced satisfactory correlations between experimental observations and theoretical calculations, and enabled potential analysis applications for complex higher distillate fuels, such as diesel fuel. Further improvement of the methods was proposed. 

We investigate 29Si nuclear magnetic resonance (NMR) chemical shifts, δiso, of silicon nitride. Our goal is to relate the local structure to the NMR signal and, thus, provide the means to extract more information from the experimental 29Si NMR spectra in this family of compounds. We apply structural modeling and the gauge-included projector augmented wave (GIPAW) method within density functional theory (DFT) calculations. Our models comprise known and hypothetical crystalline Si3N4, as well as amorphous Si3N4 structures. We find good agreement with available experimental 29Si NMR data for tetrahedral Si[4] and octahedral Si[6] in crystalline Si3N4, predict the chemical shift of a trigonal-bipyramidal Si[5] to be about −120 ppm, and quantify the impact of Si-N bond lengths on 29Si δiso. We show through computations that experimental 29Si NMR data indicates that silicon dicarbodiimide, Si(NCN)2 exhibits bent Si-N-C units with angles of about 143° in its structure. A detailed investigation of amorphous silicon nitride shows that an observed peak asymmetry relates to the proximity of a fifth N neighbor in non-bonding distance between 2.5 and 2.8 Å to Si. We reveal the impact of both Si-N(H)-Si bond angle and Si-N bond length on 29Si δiso in hydrogenated silicon nitride structure, silicon diimide Si(NH)2.