Halide vapor phase epitaxial (HVPE) Ga2O3 films were grown on c-plane sapphire and diamond substrates at temperatures up to 550 °C without the use of a barrier dielectric layer to protect the diamond surface. Corundum phase α-Ga2O3 was grown on the sapphire substrates, whereas the growth on diamond resulted in regions of nanocrystalline β-Ga2O3 (nc-β-Ga2O3) when oxygen was present in the HVPE reactor only during film growth. X-ray diffraction confirmed the growth of α-Ga2O3 on sapphire but failed to detect any β-Ga2O3 reflections from the films grown on diamond. These films were further characterized via Raman spectroscopy, which revealed the β-Ga2O3 phase of these films. Transmission electron microscopy demonstrated the nanocrystalline character of these films. From cathodoluminescence spectra, three emission bands, UVL′, UVL, and BL, were observed for both the α-Ga2O3/sapphire and nc-Ga2O3/diamond, and these bands were centered at approximately 3.7, 3.2, and 2.7 eV.
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Xia, Xinyi ; Xian, Minghan ; Carey, Patrick ; Fares, Chaker ; Ren, Fan ; Tadjer, Marko ; Pearton, S J ; Tu, Thieu Quang ; Goto, Ken ; Kuramata, Akito ( , Journal of Physics D: Applied Physics)
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Green, Andrew J. ; Speck, James ; Xing, Grace ; Moens, Peter ; Allerstam, Fredrik ; Gumaelius, Krister ; Neyer, Thomas ; Arias-Purdue, Andrea ; Mehrotra, Vivek ; Kuramata, Akito ; et al ( , APL Materials)
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Yang, Jiancheng ; Chen, Zhiting ; Ren, Fan ; Pearton, S. J. ; Yang, Gwangseok ; Kim, Jihyun ; Lee, Jonathan ; Flitsiyan, Elena ; Chernyak, Leonid ; Kuramata, Akito ( , Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
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Hu, Zongyang ; Nomoto, Kazuki ; Li, Wenshen ; Zhang, Zexuan ; Tanen, Nicholas ; Thieu, Quang Tu ; Sasaki, Kohei ; Kuramata, Akito ; Nakamura, Tohru ; Jena, Debdeep ; et al ( , Applied Physics Letters)