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Bragg gratings offer high-performance filtering and routing of light on-chip through a periodic modulation of a waveguide’s effective refractive index. Here, we model and experimentally demonstrate the use of Sb₂Se₃, a nonvolatile and transparent phase-change material, to tune the resonance conditions in two devices which leverage periodic Bragg gratings—a stopband filter and Fabry-Perot cavity. Through simulations, we show that similar refractive indices between silicon and amorphous Sb₂Se₃can be used to induce broadband transparency, while the crystalline state can enhance the index contrast in these Bragg devices. Our experimental results show the promise and limitations of this design approach and highlight specific fabrication challenges which need to be addressed in future implementations.

 

Abstract The exponential growth of information stored in data centers and computational power required for various data-intensive applications, such as deep learning and AI, call for new strategies to improve or move beyond the traditional von Neumann architecture. Recent achievements in information storage and computation in the optical domain, enabling energy-efficient, fast, and high-bandwidth data processing, show great potential for photonics to overcome the von Neumann bottleneck and reduce the energy wasted to Joule heating. Optically readable memories are fundamental in this process, and while light-based storage has traditionally (and commercially) employed free-space optics, recent developments in photonic integrated circuits (PICs) and optical nano-materials have opened the doors to new opportunities on-chip. Photonic memories have yet to rival their electronic digital counterparts in storage density; however, their inherent analog nature and ultrahigh bandwidth make them ideal for unconventional computing strategies. Here, we review emerging nanophotonic devices that possess memory capabilities by elaborating on their tunable mechanisms and evaluating them in terms of scalability and device performance. Moreover, we discuss the progress on large-scale architectures for photonic memory arrays and optical computing primarily based on memory performance. 

Chalcogenide phase change materials (PCMs) have become one of the most promising material platforms for the Optics and Photonics community. The unparalleled combination of nonvolatility and large optical property modulation promises devices with low‐energy consumption and ultra‐compact form factors. At the core of all these applications lies the difficult task of precisely controlling the glassy amorphous and crystalline domains that compose the PCM microstructure and dictate the optical response. A spatially controllable glassy‐crystalline domain distribution is desired for intermediate optical response (vs. binary response between fully amorphous and crystalline states), and temporally resolved domains are sought after for repeatable reconfiguration. In this perspective, we briefly review the fundamentals of PCM phase transition in various reconfiguring approaches for optical devices. We discuss each method's underpinning mechanisms, design, advantages, and downsides. Finally, we lay out current challenges and future directions in this field.