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Supervised Deep Learning and Classification of Single-Event Transients

https://doi.org/10.1109/TNS.2023.3268987

Peyton, T. ; Carpenter, J. L. ; Camp, S. ; Fadul, M. ; Dean, B. ; Reising, D. R. ; Loveless, T. D. ( April 2023 , IEEE Transactions on Nuclear Science)

Free, publicly-accessible full text available April 23, 2024
Analysis of Single Event Transients in Arbitrary Waveforms Using Statistical Window Analysis

https://doi.org/10.1109/TNS.2023.3243496

Carpenter, J. L. ; Peyton, T. N. ; Dean, B. R. ; Lawrence, S. P. ; Young, R. D. ; Reising, D. R. ; Loveless, T. D. ( April 2023 , IEEE Transactions on Nuclear Science)

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Machine Learning Approaches for Analysis of Total Ionizing Dose in Microelectronics2013

Dean, B. ; Peyton T. ; Carpenter, J. L. ; Sam, D. ; Peterson, A. ; Kim, J. ; Lawrence, S. P. ; Fadul, M. ; Reising, D. L. ; Loveless, T. D. ( October 2022 , 2022 European Conference on Radiation and Its Effects on Components and Systems (RADECS))

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Effects of Total Ionizing Dose on SRAM Physical Unclonable Functions

https://doi.org/10.1109/TNS.2022.3146279

Lawrence, S. P. ; Smith, S. C. ; Cannon, J. M. ; Carpenter, J. L. ; Reising, D. R. ; Loveless, T. D. ( January 2022 , IEEE Transactions on Nuclear Science)

The effects of total ionizing dose (TID) on SRAM physical unclonable functions (PUF) are studied through x-ray and proton irradiation of commercially available SRAM. Negative shifts in the Fractional Hamming Weight (FHW) were measured with increasing TID, indicating a migration of bistable cells towards logic low. Additionally, positive shifts in the intra-die Fractional Hamming Distance (FHD) were measured and indicate changes to the virtual fingerprint of an SRAM PUF with TID, especially in devices that were dosed while holding data. Shifts in inter-die FHD were negligible, allowing individual SRAMs still to be easily identified based on the FHD between a known and unknown sample even after moderate amounts of TID. In some cases, SRAMs could still be identified by their PUFs after the devices had failed. In all cases, the irradiated SRAM devices retain their virtual fingerprint after recovery through annealing.
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Analysis of Single-Event Transients (SETs) Using Machine Learning (ML) and Ionizing Radiation Effects Spectroscopy (IRES)

https://doi.org/10.1109/TNS.2021.3050879

Loveless, T. D. ; Reising, D. R. ; Cancelleri, J. C. ; Massengill, L. W. ; McMorrow, D. ( August 2021 , IEEE Transactions on Nuclear Science)

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Ionizing Radiation Effects Spectroscopy for Analysis of Single-Event Transients

https://doi.org/10.1109/TNS.2019.2950385

Loveless, T. D. ; Patel, B. ; Reising, D. R. ; Roca, R. ; Allen, M. ; Massengill, L. W. ; McMorrow, D. ( January 2020 , IEEE Transactions on Nuclear Science)

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