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Relativistic Weyl fermion quasiparticles in Weyl semimetal bring the electron’s chirality degree of freedom into the electrical transport and give rise to exotic phenomena. A topological phase transition from a topological trivial phase to a topological non-trivial phase offers a route to control electronic devices through its topological properties. Here, we report the Weyl semimetal phase in hydrothermally grown two-dimensional Tellurium (2D Te) induced by high hydrostatic pressure (up to 2.47 GPa). The unique chiral crystal structure gives rise to chiral fermions with different topological chiral charges ($${{C}}=-{{1}},+{{1}},{{and}}-{{2}}$$$C=-1,+1,and-2$). The highly tunable chemical potential in 2D Te provides comprehensive information for understanding the pressure-dependent electron band structure. The pressure-induced insulator-to-metal transition, two-carrier transport, and the non-trivial π Berry phase shift in quantum oscillations are observed in the 2D Te Weyl semimetal phase. Our work demonstrates the pressure-induced bandgap closing in the inversion asymmetric narrow bandgap semiconductor 2D Te.

 

Anisotropic planar polaritons - hybrid electromagnetic modes mediated by phonons, plasmons, or excitons - in biaxial two-dimensional (2D) van der Waals crystals have attracted significant attention due to their fundamental physics and potential nanophotonic applications. In this Perspective, we review the properties of planar hyperbolic polaritons and the variety of methods that can be used to experimentally tune them. We argue that such natural, planar hyperbolic media should be fairly common in biaxial and uniaxial 2D and 1D van der Waals crystals, and identify the untapped opportunities they could enable for functional (i.e. ferromagnetic, ferroelectric, and piezoelectric) polaritons. Lastly, we provide our perspectives on the technological applications of such planar hyperbolic polaritons.

 

Surface plasmons, which allow tight confinement of light, suffer from high intrinsic electronic losses. It has been shown that stimulated emission from excited electrons can transfer energy to plasmons and compensate for the high intrinsic losses. To-date, these realizations have relied on introducing an external gain media coupled to the surface plasmon. Here, we propose that plasmons in two-dimensional materials with closely located electron and hole Fermi pockets can be amplified, when an electrical current bias is applied along the displaced electron-hole pockets, without the need for an external gain media. As a prototypical example, we consider WTe₂from the family of 1T$${}^{{\prime} }$$${}^{\prime }$-MX₂materials, whose electronic structure can be described within a type-II tilted massive Dirac model. We find that the nonlocal plasmonic response experiences prominent gain for experimentally accessible currents on the order of mAμm⁻¹. Furthermore, the group velocity of the plasmon found from the isofrequency curves imply that the amplified plasmons are highly collimated along a direction perpendicular to the Dirac node tilt when the electrical current is applied along it.

 

Near-perfect light absorbers (NPLAs), with absorbance,$${{{{{{{\mathcal{A}}}}}}}}$$$A$, of at least 99%, have a wide range of applications ranging from energy and sensing devices to stealth technologies and secure communications. Previous work on NPLAs has mainly relied upon plasmonic structures or patterned metasurfaces, which require complex nanolithography, limiting their practical applications, particularly for large-area platforms. Here, we use the exceptional band nesting effect in TMDs, combined with a Salisbury screen geometry, to demonstrate NPLAs using only two or three uniform atomic layers of transition metal dichalcogenides (TMDs). The key innovation in our design, verified using theoretical calculations, is to stack monolayer TMDs in such a way as to minimize their interlayer coupling, thus preserving their strong band nesting properties. We experimentally demonstrate two feasible routes to controlling the interlayer coupling: twisted TMD bi-layers and TMD/buffer layer/TMD tri-layer heterostructures. Using these approaches, we demonstrate room-temperature values of$${{{{{{{\mathcal{A}}}}}}}}$$$A$=95% atλ=2.8 eV with theoretically predicted values as high as 99%. Moreover, the chemical variety of TMDs allows us to design NPLAs covering the entire visible range, paving the way for efficient atomically-thin optoelectronics.

 

Recent advancement in the switching of perpendicular magnetic tunnel junctions with an electric field has been a milestone for realizing ultra-low energy memory and computing devices. To integrate with current spin-transfer torque-magnetic tunnel junction and spin–orbit torque-magnetic tunnel junction devices, the typical linear fJ/V m range voltage controlled magnetic anisotropy (VCMA) needs to be significantly enhanced with approaches that include new materials or stack engineering. A possible bidirectional and 1.1 pJ/V m VCMA effect has been predicted by using heavily electron-depleted Fe/MgO interfaces. To improve upon existing VCMA technology, we have proposed inserting high work function materials underneath the magnetic layer. This will deplete electrons from the magnetic layer biasing the gating window into the electron-depleted regime, where the pJ/V m and bidirectional VCMA effect was predicted. We have demonstrated tunable control of the Ta/Pd(x)/Ta underlayer's work function. By varying the Pd thickness (x) from 0 to 10 nm, we have observed a tunable change in the Ta layer's work function from 4.32 to 4.90 eV. To investigate the extent of the electron depletion as a function of the Pd thickness in the underlayer, we have performed DFT calculations on supercells of Ta/Pd(x)/Ta/CoFe/MgO, which demonstrate that electron depletion will not be fully screened at the CoFe/MgO interface. Gated pillar devices with Hall cross geometries were fabricated and tested to extract the anisotropy change as a function of applied gate voltage for samples with various Pd thicknesses. The electron-depleted Pd samples show three to six times VCMA improvement compared to the electron accumulated Ta control sample. 

The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe₂) and a topological semimetal (ZrTe₂). We find that one unit-cell (u.c.) thick 1T-CrTe₂grown epitaxially on ZrTe₂is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe₂), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe₂(3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.