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Using transdimensional plasmonic materials (TDPM) within the framework of fluctuational electrodynamics, we demonstrate nonlocality in dielectric response alters near-field heat transfer at gap sizes on the order of hundreds of nanometers. Our theoretical study reveals that, opposite to the local model prediction, propagating waves can transport energy through the TDPM. However, energy transport by polaritons at shorter separations is reduced due to the metallic response of TDPM stronger than that predicted by the local model. Our experiments conducted for a configuration with a silica sphere and a doped silicon plate coated with an ultrathin layer of platinum as the TDPM show good agreement with the nonlocal near-field radiation theory. Our experimental work in conjunction with the nonlocal theory has important implications in thermophotovoltaic energy conversion, thermal management applications with metal coatings, and quantum-optical structures. 

The study of cell-cell interaction in high-throughput is critically important in many biological systems, including oncology, immunology, and tissue engineering. However, the passive co-encapsulation of one type A cell and one type B cell per single droplet, termed 1-1-1 encapsulation, has been dictated by double Poisson distribution, which yields only ~5% efficiency with common cell loading density. Such low efficiency makes it impractical for biological analyses at scale. Here, we demonstrate a passive 1-1-1 co-encapsulation microfluidic device that leverages close packing of cells with hydrodynamic sheath flow to achieve over two-fold improvement compared to the double Poisson model. 

Realizing quantum speedup for practically relevant, computationally hard problems is a central challenge in quantum information science. Using Rydberg atom arrays with up to 289 qubits in two spatial dimensions, we experimentally investigate quantum algorithms for solving the Maximum Independent Set problem. We use a hardware-efficient encoding associated with Rydberg blockade, realize closed-loop optimization to test several variational algorithms, and subsequently apply them to systematically explore a class of graphs with programmable connectivity. We find the problem hardness is controlled by the solution degeneracy and number of local minima, and experimentally benchmark the quantum algorithm’s performance against classical simulated annealing. On the hardest graphs, we observe a superlinear quantum speedup in finding exact solutions in the deep circuit regime and analyze its origins. 

Self-healing triboelectric nanogenerators (SH-TENGs) with fast self-healing, high output performance, and wearing comfort have wide and promising applications in wearable electronic devices. This work presents a high-performance hydrogel-based SH-TENG, which consists of a high dielectric triboelectric layer (HDTL), a self-healing hydrogel electrode layer (SHEL), and a physical cross-linking layer (PCLL). Carbon nanotubes (CNTs), obtained by a chemical vapor deposition (CVD) method, were added into polydimethylsiloxane (PDMS) to produce the HDTL. Compared with pure PDMS, the short-circuit transferred charge (44 nC) and the open circuit voltage (132 V) are doubled for PDMS with 0.01 wt% CNTs. Glycerin, polydopamine particles (PDAP) and graphene were added to poly (vinyl alcohol) (PVA) to prepare the self-healing hydrogel electrode layer. SHEL can physically self-heal in ~1 min when exposed to air. The self-healing efficiency reaches up to 98%. The PCLL is made of poly(methylhydrosiloxane) (PMHS) and PDMS. It forms a good physical bond between the hydrophilic hydrogel and hydrophobic PDMS layers. The electric output performance of the SH-TENG can reach 94% of the undamaged one in 1 min. The SH-TENG (6 × 6 cm2) exhibits good stability and superior electrical performance, enabling it to power 37 LEDs simultaneously. 

Abstract The manipulation of antiferromagnetic order in magnetoelectric Cr 2 O 3 using electric field has been of great interest due to its potential in low-power electronics. The substantial leakage and low dielectric breakdown observed in twinned Cr 2 O 3 thin films, however, hinders its development in energy efficient spintronics. To compensate, large film thicknesses (250 nm or greater) have been employed at the expense of device scalability. Recently, epitaxial V 2 O 3 thin film electrodes have been used to eliminate twin boundaries and significantly reduce the leakage of 300 nm thick single crystal films. Here we report the electrical endurance and magnetic properties of thin (less than 100 nm) single crystal Cr 2 O 3 films on epitaxial V 2 O 3 buffered Al 2 O 3 (0001) single crystal substrates. The growth of Cr 2 O 3 on isostructural V 2 O 3 thin film electrodes helps eliminate the existence of twin domains in Cr 2 O 3 films, therefore significantly reducing leakage current and increasing dielectric breakdown. 60 nm thick Cr 2 O 3 films show bulk-like resistivity (~ 10 12 Ω cm) with a breakdown voltage in the range of 150–300 MV/m. Exchange bias measurements of 30 nm thick Cr 2 O 3 display a blocking temperature of ~ 285 K while room temperature optical second harmonic generation measurements possess the symmetry consistent with bulk magnetic order.