- Home
- Search Results
- Page 1 of 1
Search for: All records
-
Total Resources2
- Resource Type
-
00020
- Availability
-
20
- Author / Contributor
- Filter by Author / Creator
-
-
Casamento, Joseph (2)
-
Jena, Debdeep (2)
-
Lee, Hyunjea (2)
-
Maeda, Takuya (2)
-
Xing, Huili (Grace) (2)
-
Besser, Matthew F. (1)
-
Chang, Celesta S. (1)
-
Fay, Patrick (1)
-
Gund, Ved (1)
-
Lal, Amit (1)
-
Mu, Sai (1)
-
Muller, David A. (1)
-
Nomoto, Kazuki (1)
-
Turner, Wesley (1)
-
Van de Walle, Chris G. (1)
-
van Deurzen, Len (1)
-
#Tyler Phillips, Kenneth E. (0)
-
#Willis, Ciara (0)
-
& Abreu-Ramos, E. D. (0)
-
& Abramson, C. I. (0)
-
- Filter by Editor
-
-
& Spizer, S. M. (0)
-
& . Spizer, S. (0)
-
& Ahn, J. (0)
-
& Bateiha, S. (0)
-
& Bosch, N. (0)
-
& Brennan K. (0)
-
& Brennan, K. (0)
-
& Chen, B. (0)
-
& Chen, Bodong (0)
-
& Drown, S. (0)
-
& Ferretti, F. (0)
-
& Higgins, A. (0)
-
& J. Peters (0)
-
& Kali, Y. (0)
-
& Ruiz-Arias, P.M. (0)
-
& S. Spitzer (0)
-
& Spitzer, S. (0)
-
& Spitzer, S.M. (0)
-
(submitted - in Review for IEEE ICASSP-2024) (0)
-
- (0)
-
-
Have feedback or suggestions for a way to improve these results?
!
Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher.
Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?
Some links on this page may take you to non-federal websites. Their policies may differ from this site.
-
Casamento, Joseph ; Lee, Hyunjea ; Maeda, Takuya ; Gund, Ved ; Nomoto, Kazuki ; van Deurzen, Len ; Turner, Wesley ; Fay, Patrick ; Mu, Sai ; Van de Walle, Chris G. ; et al ( , Applied Physics Letters)
Epitaxial ScxAl1−xN thin films of ∼100 nm thickness grown on metal polar GaN substrates are found to exhibit significantly enhanced relative dielectric permittivity (εr) values relative to AlN. εrvalues of ∼17–21 for Sc mole fractions of 17%–25% ( x = 0.17–0.25) measured electrically by capacitance–voltage measurements indicate that ScxAl1−xN has the largest relative dielectric permittivity of any existing nitride material. Since epitaxial ScxAl1−xN layers deposited on GaN also exhibit large polarization discontinuity, the heterojunction can exploit the in situ high-K dielectric property to extend transistor operation for power electronics and high-speed microwave applications.