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In this work, the effect of rapid thermal annealing (RTA) temperature on the ferroelectric polarization in zirconium-doped hafnium oxide (HZO) was studied. To maximize remnant polarization (2P r ), in-plane tensile stress was induced by tungsten electrodes under optimal RTA temperatures. We observed an increase in 2P r with RTA temperature, likely due to an increased proportion of the polar ferroelectric phase in HZO. The HZO capacitors annealed at 400°C did not exhibit any ferroelectric behavior, whereas the HZO capacitors annealed at 800°C became highly leaky and shorted for voltages above 1 V. On the other hand, annealing at 700 °C produced HZO capacitors with a record-high 2P r of ∼ 64 μ C cm −2  at a relatively high frequency of 111 kHz. These ferroelectric capacitors have also demonstrated impressive endurance and retention characteristics, which will greatly benefit neuromorphic computing applications. 

Different from nonvolatile memory applications, neuromorphic computing applications utilize not only the static conductance states but also the switching dynamics for computing, which calls for compact dynamical models of memristive devices. In this work, a generalized model to simulate diffusive and drift memristors with the same set of equations is presented, which have been used to reproduce experimental results faithfully. The diffusive memristor is chosen as the basis for the generalized model because it possesses complex dynamical properties that are difficult to model efficiently. A data set from statistical measurements on SiO₂:Ag diffusive memristors is collected to verify the validity of the general model. As an application example, spike‐timing‐dependent plasticity is demonstrated with an artificial synapse consisting of a diffusive memristor and a drift memristor, both modeled with this comprehensive compact model.

 

Sneak path current is a fundamental issue and a major roadblock to the wide application of memristor crossbar arrays. Traditional selectors such as transistors compromise the 2D scalability and 3D stack‐ability of the array, while emerging selectors with highly nonlinear current–voltage relations contradict the requirement of a linear current–voltage relation for efficient multiplication by directly using Ohm's law. Herein, the concept of a timing selector is proposed and demonstrated, which addresses the sneak path issue with a voltage‐dependent delay time of its transient switching behavior, while preserving a linear current–voltage relationship for computation. Crossbar arrays with silver‐based diffusive memristors as the timing selectors are built and the operation principle and operational windows are experimentally demonstrated. The timing selector enables large memristor crossbar arrays that can be used to solve large‐dimension real‐world problems in machine intelligence and neuromorphic computing.

 

Threshold switches with Ag or Cu active metal species are volatile memristors (also termed diffusive memristors) featuring spontaneous rupture of conduction channels. The temporal dynamics of the conductance evolution is closely related to the electrochemical and diffusive dynamics of the active metals which could be modulated by electric field strength, biasing duration, temperature, and so on. Microscopic pictures by electron microscopy and quantitative thermodynamics modeling are examined to give insights into the underlying physics of the switching. Depending on the time scale of the relaxation process, such devices find a variety of novel applications in electronics, ranging from selector devices for memories to synaptic devices for neuromorphic computing.