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Abstract The layered square-planar nickelates, Nd n +1 Ni n O 2 n +2 , are an appealing system to tune the electronic properties of square-planar nickelates via dimensionality; indeed, superconductivity was recently observed in Nd 6 Ni 5 O 12 thin films. Here, we investigate the role of epitaxial strain in the competing requirements for the synthesis of the n  = 3 Ruddlesden-Popper compound, Nd 4 Ni 3 O 10 , and subsequent reduction to the square-planar phase, Nd 4 Ni 3 O 8 . We synthesize our highest quality Nd 4 Ni 3 O 10 films under compressive strain on LaAlO 3 (001), while Nd 4 Ni 3 O 10 on NdGaO 3 (110) exhibits tensile strain-induced rock salt faults but retains bulk-like transport properties. A high density of extended defects forms in Nd 4 Ni 3 O 10 on SrTiO 3 (001). Films reduced on LaAlO 3 become insulating and form compressive strain-induced c -axis canting defects, while Nd 4 Ni 3 O 8 films on NdGaO 3 are metallic. This work provides a pathway to the synthesis of Nd n +1 Ni n O 2 n +2 thin films and sets limits on the ability to strain engineer these compounds via epitaxy. 

Non‐collinear antiferromagnets (AFMs) are an exciting new platform for studying intrinsic spin Hall effects (SHEs), phenomena that arise from the materials’ band structure, Berry phase curvature, and linear response to an external electric field. In contrast to conventional SHE materials, symmetry analysis of non‐collinear antiferromagnets does not forbid non‐zero longitudinal and out‐of‐plane spin currents with polarization and predicts an anisotropy with current orientation to the magnetic lattice. Here, multi‐component out‐of‐plane spin Hall conductivities are reported in L1₂‐ordered antiferromagnetic PtMn₃thin films that are uniquely generated in the non‐collinear state. The maximum spin torque efficiencies (ξ  =J_S /J_e ≈ 0.3) are significantly larger than in Pt (ξ  ≈  0.1). Additionally, the spin Hall conductivities in the non‐collinear state exhibit the predicted orientation‐dependent anisotropy, opening the possibility for new devices with selectable spin polarization. This work demonstrates symmetry control through the magnetic lattice as a pathway to tailored functionality in magnetoelectronic systems.

 

Large‐scale, polycrystalline WTe₂thin films are synthesized by atmospheric chemical vapor reaction of W metal films with Te vapor catalyzed by H₂Te intermediates, paving a way to understanding the synthesis mechanism for low bonding energy tellurides and toward synthesis of single‐crystalline telluride nanoflakes. Through‐plane and in‐plane thermal conductivities of single‐crystal WTe₂flakes and polycrystalline WTe₂thin films are measured for the first time. Nanoscale grains and disorder in WTe₂thin films suppress the in‐plane thermal conductivity of WTe₂greatly, which is at least 7.5 times lower than that of the single‐crystalline flakes.