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The growing field of quantum information technology requires propagation of information over long distances with efficient readout mechanisms. Excitonic quantum fluids have emerged as a powerful platform for this task due to their straightforward electro-optical conversion. In two-dimensional transition metal dichalcogenides, the coupling between spin and valley provides exciting opportunities for harnessing, manipulating, and storing bits of information. However, the large inhomogeneity of single layers cannot be overcome by the properties of bright excitons, hindering spin-valley transport. Nonetheless, the rich band structure supports dark excitonic states with strong binding energy and longer lifetime, ideally suited for long-range transport. Here we show that dark excitons can diffuse over several micrometers and prove that this repulsion-driven propagation is robust across non-uniform samples. The long-range propagation of dark states with an optical readout mediated by chiral phonons provides a new concept of excitonic devices for applications in both classical and quantum information technology.

 

Abstract The performance of electronic and optoelectronic devices is dominated by charge carrier injection through the metal–semiconductor contacts. Therefore, creating low-resistance electrical contacts is one of the most critical challenges in the development of devices based on new materials, particularly in the case of two-dimensional semiconductors. Herein, we report a strategy to reduce the contact resistance of MoS 2 via local pressurization. We fabricated electrical contacts using an atomic force microscopy tip and applied variable pressure ranging from 0 to 25 GPa. By measuring the transverse electronic transport properties, we show that MoS 2 undergoes a reversible semiconducting-metallic transition under pressure. Planar devices in field effect configuration with electrical contacts performed at pressures above ∼15 GPa show up to 30-fold reduced contact resistance and up to 25-fold improved field-effect mobility when compared to those measured at low pressure. Theoretical simulations show that this enhanced performance is due to improved charge injection to the MoS 2 semiconductor channel through the metallic MoS 2 phase obtained by pressurization. Our results suggest a novel strategy for realizing improved contacts to MoS 2 devices by local pressurization and for exploring emergent phenomena under mechano-electric modulation. 

The outstanding performance of organic-inorganic metal trihalide solar cells benefits from the exceptional photo-physical properties of both electrons and holes in the material. Here, we directly probe the free-carrier dynamics in Cs-doped FAPbI₃thin films by spatiotemporal photoconductivity imaging. Using charge transport layers to selectively quench one type of carriers, we show that the two relaxation times on the order of 1 μs and 10 μs correspond to the lifetimes of electrons and holes in FACsPbI₃, respectively. Strikingly, the diffusion mapping indicates that the difference in electron/hole lifetimes is largely compensated by their disparate mobility. Consequently, the long diffusion lengths (3~5 μm) of both carriers are comparable to each other, a feature closely related to the unique charge trapping and de-trapping processes in hybrid trihalide perovskites. Our results unveil the origin of superior diffusion dynamics in this material, crucially important for solar-cell applications.