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Abstract Spin-orbit torques (SOTs) have been widely understood as an interfacial transfer of spin that is independent of the bulk properties of the magnetic layer. Here, we report that SOTs acting on ferrimagnetic Fe x Tb 1- x layers decrease and vanish upon approaching the magnetic compensation point because the rate of spin transfer to the magnetization becomes much slower than the rate of spin relaxation into the crystal lattice due to spin-orbit scattering. These results indicate that the relative rates of competing spin relaxation processes within magnetic layers play a critical role in determining the strength of SOTs, which provides a unified understanding for the diverse and even seemingly puzzling SOT phenomena in ferromagnetic and compensated systems. Our work indicates that spin-orbit scattering within the magnet should be minimized for efficient SOT devices. We also find that the interfacial spin-mixing conductance of interfaces of ferrimagnetic alloys (such as Fe x Tb 1- x ) is as large as that of 3 d ferromagnets and insensitive to the degree of magnetic compensation. 

Sagnac interferometry can provide a substantial improvement in signal-to-noise ratio compared to conventional magnetic imaging based on the magneto-optical Kerr effect. We show that this improvement is sufficient to allow quantitative measurements of current-induced magnetic deflections due to spin-orbit torque even in thin-film magnetic samples with perpendicular magnetic anisotropy, for which the Kerr rotation is second order in the magnetic deflection. Sagnac interferometry can also be applied beneficially for samples with in-plane anisotropy, for which the Kerr rotation is first order in the deflection angle. Optical measurements based on Sagnac interferometry can therefore provide a cross-check on electrical techniques for measuring spin-orbit torque. Different electrical techniques commonly give quantitatively inconsistent results so that Sagnac interferometry can help to identify which techniques are affected by unidentified artifacts.

 

Abstract We present room-temperature measurements of magnon spin diffusion in epitaxial ferrimagnetic insulator MgAl 0.5 Fe 1.5 O 4 (MAFO) thin films near zero applied magnetic field where the sample forms a multi-domain state. Due to a weak uniaxial magnetic anisotropy, the domains are separated primarily by 180° domain walls. We find, surprisingly, that the presence of the domain walls has very little effect on the spin diffusion – nonlocal spin transport signals in the multi-domain state retain at least 95% of the maximum signal strength measured for the spatially-uniform magnetic state, over distances at least five times the typical domain size. This result is in conflict with simple models of interactions between magnons and static domain walls, which predict that the spin polarization carried by the magnons reverses upon passage through a 180° domain wall. 

There is great interest in “end-to-end” analysis that captures how innovation at the materials, device, and/or archi-tectural levels will impact figures of merit at the application-level. However, there are numerous combinations of devices and architectures to study, and we must establish systematic ways to accurately explore and cull a vast design space. We aim to capture how innovations at the materials/device-level may ultimately impact figures of merit associated with both existing and emerging technologies that may be employed for either logic and/or memory. We will highlight how collaborations with researchers at these levels of the design hierarchy - as well as efforts to help construct well-calibrated device models - can in-turn support architectural design space explorations that will help to identify the most promising ways to use new technologies to support application-level workloads of interest. For given compute workloads, we can then quantitatively assess the potential benefits of technology-driven architectures to identify the most promising paths forward. Because of the large number of potentially interesting device-architecture combinations, it is of the utmost importance to develop well-calibrated analytical modeling tools to more rapidly assess the potential value of a given (likely heterogeneous) solution. We highlight recent efforts and needs in this space. 

Efficient manipulation of antiferromagnetically coupled materials that are integration-friendly and have strong perpendicular magnetic anisotropy (PMA) is of great interest for low-power, fast, dense magnetic storage and computing. Here, we report a distinct, giant bulk damping-like spin–orbit torque in strong-PMA ferrimagnetic Fe 100− x Tb x single layers that are integration-friendly (composition-uniform, amorphous, and sputter-deposited). For sufficiently thick layers, this bulk torque is constant in the efficiency per unit layer thickness, [Formula: see text]/ t, with a record-high value of 0.036 ± 0.008 nm −1 , and the damping-like torque efficiency [Formula: see text] achieves very large values for thick layers, up to 300% for 90 nm layers. This giant bulk torque by itself switches tens of nm thick Fe 100− x Tb x layers that have very strong PMA and high coercivity at current densities as low as a few MA/cm 2 . Surprisingly, for a given layer thickness, [Formula: see text] shows strong composition dependence and becomes negative for composition where the total angular momentum is oriented parallel to the magnetization rather than antiparallel. Our findings of giant bulk spin torque efficiency and intriguing torque-compensation correlation will stimulate study of such unique spin–orbit phenomena in a variety of ferrimagnetic hosts. This work paves a promising avenue for developing ultralow-power, fast, dense ferrimagnetic storage and computing devices. 

Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe₃GeTe₂(FGT) are reported. The orientation of the exchange bias is along the in‐plane easy axis of CrSBr, perpendicular to the out‐of‐plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in‐plane exchange bias provides sufficient symmetry breaking to allow deterministic spin–orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non‐zero exchange bias at 30 K.