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  1. In this work, we report a study of the temperature dependent pulsed current voltage and RF characterization of [Formula: see text]-(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 hetero-structure FETs (HFETs) before and after silicon nitride (Si 3 N 4 ) passivation. Under sub-microsecond pulsing, a moderate DC-RF dispersion (current collapse) is observed before passivation in gate lag measurements, while no current collapse is observed in the drain lag measurements. The dispersion in the gate lag is possibly attributed to interface traps in the gate–drain access region. DC-RF dispersion did not show any strong dependence on the pulse widths. Temperature dependent RF measurements up to 250 °C do not show degradation in the cutoff frequencies. After Si 3 N 4 deposition at 350 °C, a shift of the threshold voltage is observed which changed the DC characteristics. However, the current collapse is eliminated; at 200 ns pulse widths, a 50% higher current is observed compared to the DC at high drain voltages. No current collapse is observed even at higher temperatures. RF performance of the passivated devices does not show degradation. These results show that ex situ deposited Si 3 N 4 is a potential candidate for passivation of [Formula: see text]-(Al x Ga 1−x ) 2 O 3 /Ga 2 O 3 HFETs. 
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  2. This work reports the quantification of rise in channel temperature due to self-heating in two-terminal SrSnO3 thin film devices under electrical bias. Using pulsed current–voltage (I–V) measurements, thermal resistances of the thin films were determined by extracting the relationship between the channel temperature and the dissipated power. For a 26-nm-thick n-doped SrSnO3 channel with an area of 200 μm2, a thermal resistance of 260.1 ± 24.5 K mm/W was obtained. For a modest dissipated power of 0.5 W/mm, the channel temperature rose to ∼176 °C, a value which increases further at higher power levels. Electro-thermal simulations were performed which showed close agreement between the simulated and experimental I–V characteristics both in the absence and presence of self-heating. The work presented is critical for the development of perovskite-based high-power electronic devices.

     
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