Properties of a double-period InAs/GaSb superlattice grown by solid-source molecular beam epitaxy are presented. Precise growth conditions at the InAs/GaSb heterojunction yielded abrupt heterointerfaces and superior material quality as verified by X-ray diffraction and transmission electron microscopy (TEM) analysis. Moreover, high-resolution TEM imaging and elemental composition profiling of the InAs/GaSb heterostructure demonstrated abrupt atomic transitions between each Sb- or As-containing epilayer. An 8 × 8 k · p model is used to compute the electronic band structure of the constituent long- and short-period superlattices, taking into account the effects of conduction and valence band mixing, quantum confinement, pseudomorphic strain, and magnetic field on the calculated dispersions. Magnetotransport measurements over a variable temperature range (390 mK to 294 K) show anisotropic transport exhibiting a striking magnetoresistance and show Shubnikov-de Haas oscillations, the latter being indicative of high quality material synthesis. The measurements also reveal the existence of at least two carrier populations contributing to in-plane conductance in the structure.
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