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A unique field termination structure combining a three-step field plate with nitrogen ion implantation to enhance the reverse breakdown performance of Pt/β-Ga₂O₃Schottky barrier diodes (SBDs) and NiO/β-Ga₂O₃heterojunction diodes (HJDs) is reported. The fabricated devices showed a lowR_on,spof 6.2 mΩ cm²for SBDs and 6.8 mΩ cm²for HJDs. HJDs showed a 0.8 V turn-on voltage along with an ideality factor of 1.1 leading to a low effective on-resistance of 18 mΩ cm². The devices also showed low reverse leakage current (<1 mA cm⁻²) and a breakdown voltage of ∼1.4 kV. These results offer an alternative, simpler route for fabricating high-performance kilovolt-classβ-Ga₂O₃diodes.

 

Cubic boron nitride (c-BN), with a small 1.4% lattice mismatch with diamond, presents a heterostructure with multiple opportunities for electronic device applications. However, the formation of c-BN/diamond heterostructures has been limited by the tendency to form hexagonal BN at the interface. In this study, c-BN has been deposited on free standing polycrystalline and single crystal boron-doped diamond substrates via electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD), employing fluorine chemistry. In situ x-ray photoelectron spectroscopy (XPS) is used to characterize the nucleation and growth of boron nitride (BN) films as a function of hydrogen gas flow rates during deposition. The PECVD growth rate of BN was found to increase with increased hydrogen gas flow. In the absence of hydrogen gas flow, the BN layer was reduced in thickness or etched. The XPS results show that an excess of hydrogen gas significantly increases the percent of sp2 bonding, characteristic of hexagonal BN (h-BN), particularly during initial layer growth. Reducing the hydrogen flow, such that hydrogen gas is the limiting reactant, minimizes the sp2 bonding during the nucleation of BN. TEM results indicate the partial coverage of the diamond with thin epitaxial islands of c-BN. The limited hydrogen reaction is found to be a favorable growth environment for c-BN on boron-doped diamond.

 

Two atomic layer etching (ALE) methods were studied for crystalline GaN, based on oxidation, fluorination, and ligand exchange. Etching was performed on unintentionally doped GaN grown by hydride vapor phase epitaxy. For the first step, the GaN surfaces were oxidized using either water vapor or remote O2-plasma exposure to produce a thin oxide layer. Removal of the surface oxide was addressed using alternating exposures of hydrogen fluoride (HF) and trimethylgallium (TMG) via fluorination and ligand exchange, respectively. Several HF and TMG super cycles were implemented to remove the surface oxide. Each ALE process was monitored in situ using multiwavelength ellipsometry. X-ray photoelectron spectroscopy was employed for the characterization of surface composition and impurity states. Additionally, the thermal and plasma-enhanced ALE methods were performed on patterned wafers and transmission electron microscopy (TEM) was used to measure the surface change. The x-ray photoelectron spectroscopy measurements indicated that F and O impurities remained on etched surfaces for both ALE processes. Ellipsometry indicated a slight reduction in thickness. TEM indicated a removal rate that was less than predicted. We suggest that the etch rates were reduced due to the ordered structure of the oxide formed on crystalline GaN surfaces.

 

The method of regularised stokeslets is widely used to model microscale biological propulsion. The method is usually implemented with only the single-layer potential, the double-layer potential being neglected, despite this formulation often not being justified a priori due to nonrigid surface deformation. We describe a meshless approach enabling the inclusion of the double layer which is applied to several Stokes flow problems in which neglect of the double layer is not strictly valid: the drag on a spherical droplet with partial-slip boundary condition, swimming velocity and rate of working of a force-free spherical squirmer, and trajectory, swimmer-generated flow and rate of working of undulatory swimmers of varying slenderness. The resistance problem is solved accurately with modest discretisation on a notebook computer with the inclusion of the double layer ranging from no-slip to free-slip limits; the neglect of the double-layer potential results in up to 24% error, confirming the importance of the double layer in applications such as nanofluidics, in which partial slip may occur. The squirming swimmer problem is also solved for both velocity and rate of working to within a small percent error when the double-layer potential is included, but the error in the rate of working is above 250% when the double layer is neglected. The undulating swimmer problem by contrast produces a very similar value of the velocity and rate of working for both slender and nonslender swimmers, whether or not the double layer is included, which may be due to the deformation’s ‘locally rigid body’ nature, providing empirical evidence that its neglect may be reasonable in many problems of interest. The inclusion of the double layer enables us to confirm robustly that slenderness provides major advantages in efficient motility despite minimal qualitative changes to the flow field and force distribution. 

The band alignment of Atomic Layer Deposited SiO₂on (In_xGa_1−x)₂O₃at varying indium concentrations is reported before and after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determine the thermal stability of MOS structures in high-temperature applications. At all indium concentrations studied, the valence band offsets (VBO) showed a nearly constant decrease as a result of 450 °C annealing. The decrease in VBO was −0.35 eV for (In_0.25Ga_0.75)₂O₃, −0.45 eV for (In_0.42Ga_0.58)₂O₃, −0.40 eV for (In_0.60Ga_0.40)₂O₃, and −0.35 eV (In_0.74Ga_0.26)₂O₃for 450 °C annealing. After annealing at 600 °C, the band alignment remained stable, with <0.1 eV changes for all structures examined, compared to the offsets after the 450 °C anneal. The band offset shifts after annealing are likely due to changes in bonding at the heterointerface. Even after annealing up to 600 °C, the band alignment remains type I (nested gap) for all indium compositions of (In_xGa_1−x)₂O₃studied.