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A search for pair production of squarks or gluinos decaying via sleptons or weak bosons is reported. The search targets a final state with exactly two leptons with same-sign electric charge or at least three leptons without any charge requirement. The analysed data set corresponds to an integrated luminosity of 139 fb⁻¹of proton-proton collisions collected at a centre-of-mass energy of 13 TeV with the ATLAS detector at the LHC. Multiple signal regions are defined, targeting several SUSY simplified models yielding the desired final states. A single control region is used to constrain the normalisation of theWZ+ jets background. No significant excess of events over the Standard Model expectation is observed. The results are interpreted in the context of several supersymmetric models featuring R-parity conservation or R-parity violation, yielding exclusion limits surpassing those from previous searches. In models considering gluino (squark) pair production, gluino (squark) masses up to 2.2 (1.7) TeV are excluded at 95% confidence level.

 

Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling complex oxides to traditional semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Essential to electrically coupling complex oxides to semiconductors is control of the physical structure of the epitaxially grown oxide, as well as the electronic structure of the interface. Here we discuss how composition of the perovskite A- and B- site cations can be manipulated to control the physical and electronic structure of semiconductor – complex oxide heterostructures. Two prototypical heterostructures, Ba1-xSrxTiO3/Ge and SrZrxTi1-xO3/Ge, will be discussed. In the case of Ba1-xSrxTiO3/Ge, we discuss how strain can be engineered through A-site composition to enable the re-orientable ferroelectric polarization of the former to be coupled to carriers in the semiconductor. In the case of SrZrxTi1-xO3/Ge we discuss how B-site composition can be exploited to control the band offset at the interface. Analogous to heterojunctions between compound semiconducting materials, control of band offsets, i.e. band-gap engineering, provide a pathway to electrically couple complex oxides to semiconductors to realize a host of functionalities. 

Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling oxides to semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Key to electrically coupling oxides to semiconductors is controlling the physical and electronic structure of semiconductor – crystalline oxide heterostructures. Here we discuss how composition of the oxide can be manipulated to control physical and electronic structure in Ba1-xSrxTiO3/ Ge and SrZrxTi1-xO3/Ge heterostructures. In the case of the former we discuss how strain can be engineered through composition to enable the re-orientable ferroelectric polarization to be coupled to carriers in the semiconductor. In the case of the latter we discuss how composition can be exploited to control the band offset at the semiconductor - oxide interface. The ability to control the band offset, i.e. band-gap engineering, provides a pathway to electrically couple crystalline oxides to semiconductors to realize a host of functionalities. 

A search for supersymmetry targeting the direct production of winos and higgsinos is conducted in final states with either two leptons (eorμ) with the same electric charge, or three leptons. The analysis uses 139 fb⁻¹ofppcollision data at$$ \sqrt{s} $$$\sqrt{s}$= 13 TeV collected with the ATLAS detector during Run 2 of the Large Hadron Collider. No significant excess over the Standard Model expectation is observed. Simplified and complete models with and withoutR-parity conservation are considered. In topologies with intermediate states including eitherWhorWZpairs, wino masses up to 525 GeV and 250 GeV are excluded, respectively, for a bino of vanishing mass. Higgsino masses smaller than 440 GeV are excluded in a naturalR-parity-violating model with bilinear terms. Upper limits on the production cross section of generic events beyond the Standard Model as low as 40 ab are obtained in signal regions optimised for these models and also for anR-parity-violating scenario with baryon-number-violating higgsino decays into top quarks and jets. The analysis significantly improves sensitivity to supersymmetric models and other processes beyond the Standard Model that may contribute to the considered final states.