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Creators/Authors contains: "Tschumper, Gregory S."

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  1. Free, publicly-accessible full text available October 26, 2024
  2. Abstract

    The global minima of urea and thiourea were characterized along with other low‐lying stationary points. Each structure was optimized with the CCSD(T) method and triple‐ζcorrelation consistent basis sets followed by harmonic vibrational frequency computations. Relative energies evaluated near the complete basis set limit with both canonical and explicitly correlated CCSD(T) techniques reveal several subtle but important details about both systems. These computations resolve a discrepancy by demonstrating that the electronic energy of the C2vsecond‐order saddle point of urea lies at least 1.5 kcal mol−1above the C2global minimum regardless of whether the structures were optimized with MP2, CCSD, or CCSD(T). Additionally, urea effectively has one minimum instead of two because the electronic barrier for inversion at one amino group in the Cslocal minimum vanishes at the CCSD(T) CBS limit. Characterization of both systems with the same ab initio methods and large basis sets conclusively establishes that the electronic barriers to inversion at one or both NH2groups in thiourea are appreciably smaller than in urea. CCSDT(Q)/cc‐pVTZ computations show higher‐order electron correlation effects have little impact on the relative energies and are consistently offset by core correlation effects of opposite sign and comparable magnitude.

     
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  3. A longstanding challenge in the field of optoelectronic materials, the effects of solid-state arrangement and morphology are still a prominent factor associated with small-molecule and polymer-based device performance. Here, mixed heterocyclic aromatic oligomers containing thiophene, furan and pyrazine are prepared alongside their methylated congeners. Their solution and solid-phase properties were studied via spectroscopic, electrochemical and single-crystal X-ray diffraction (XRD) analysis. Comparative analysis between solid-state packing arrangements and photophysical properties revealed optical band gaps as low as 1.7 eV with Stokes-shifts up to 130 nm and quantum yields of 12%. Results of the study aid in further understanding the effects of molecular and solid-state arrangements that give rise to unique optical and photophysical properties critical to enhancing optoelectronic behavior. 
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  4. null (Ed.)