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  1. Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to produce extremely large electrical anisotropy via grating gating of a semiconductor two-dimensional electron gas (2DEG) of AlGaN/GaN. We show that periodically modulated electric potential in the 2DEG induces in-plane electrical anisotropy, which is significantly enhanced in a magnetic field, leading to an ultra large electrical anisotropy. This is induced by a giant positive magnetoresistance and a giant negative magnetoresistance under two orthogonally oriented in-plane current flows, respectively. This giant electrical anisotropy is in situ tunable by tailoring both the grating gate voltage and the magnetic field. Our semiconductor device with controllable giant electrical anisotropy will stimulate new device applications, such as multi-terminal memtransistors and bionic synapses. 
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  4. Magnonics, which employs spin-waves to transmit and process information, is a promising venue for low-power data processing. One of the major challenges is the local control of the spin-wave propagation path. Here, we introduce the concept of writable magnonics by taking advantage of the highly flexible reconfigurability and rewritability of artificial spin ice systems. Using micromagnetic simulations, we show that globally switchable spin-wave propagation and locally writable spin-wave nanochannels can be realized in a ferromagnetic thin film underlying an artificial pinwheel spin ice. The rewritable magnonics enabled by reconfigurable spin wave nanochannels provides a unique setting to design programmable magnonic circuits and logic devices for ultra-low power applications.

     
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