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  1. Abstract

    Chalcogenide perovskites have emerged as promising semiconductor materials due to their appealing properties, including tunable bandgaps, high absorption coefficients, reasonable carrier lifetimes and mobilities, excellent chemical stability, and environmentally benign nature. However, beyond the well‐studied BaZrS3, reports on chalcogenide perovskite thin films with diverse compositions are scarce. In this study, the realization of four different types of chalcogenide perovskite thin films with controlled phases, through CS2annealing of amorphous chalcogenide precursor films deposited by pulsed laser deposition (PLD), is reported. This achievement is guided by a thorough theoretical investigation of the phase stability of chalcogenide perovskites. Upon crystallization in the distorted perovskite phase, all materials exhibit photoluminescence (PL) with peak positions in the visible range, consistent with their expected bandgap values. However, the full‐width‐at‐half‐maximum (FWHM) of the PL spectra varies significantly across these materials, ranging from 99 meV for SrHfS3to 231 meV for BaHfS3. The difference is attributed to the difference in kinetic barriers between local structural motifs for the Sr and Ba compounds. The findings underscore the promise of chalcogenide perovskite thin films as an alternative to traditional halide perovskites for optoelectronic applications, while highlighting the challenges in optimizing their synthesis and performance.

     
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  2. Abstract

    Hybrid organic inorganic perovskite solar cells based on CH3NH3PbI3have drastically increased in efficiency over the past several years and are competitive with decades‐old photovoltaic materials such as CdTe. Despite this impressive increase, significant issues still remain due to the intrinsic instability of CH3NH3PbI3which degrades into carcinogenic PbI2. Recently, double halide perovskites which use a pair of 1+–3+cations to replace Pb2+, such as Cs2InSbI6, and chalcogenide perovskites, such as BaZrS3, have been explored as potential replacements. In this work, double chalcogenide perovskites are explored to identify novel photovoltaic absorbers that can replace CH3NH3PbI3. Due to the large space of possible compounds, machine learning methods are used to classify materials as potential photovoltaic absorbers using data from the periodic table, eliminating wasteful computation. A random forest algorithm achieves a cross‐validation accuracy of 86.4% on the constructed data set. Over 450 possible replacements are identified via traditional and statistical methods with Ba2AlNbS6, Ba2GaNbS6, Ca2GaNbS6, Sr2InNbS6, and Ba2SnHfS6as the most promising alternative when thermodynamic stability, kinetic stability, and optical absorption are considered.

     
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  3. Abstract

    Parity‐time symmetry plays an essential role for the formation of Dirac states in Dirac semimetals. So far, all of the experimentally identified topologically nontrivial Dirac semimetals (DSMs) possess both parity and time reversal symmetry. The realization of magnetic topological DSMs remains a major issue in topological material research. Here, combining angle‐resolved photoemission spectroscopy with density functional theory calculations, it is ascertained that band inversion induces a topologically nontrivial ground state in EuCd2As2. As a result, ideal magnetic Dirac fermions with simplest double cone structure near the Fermi level emerge in the antiferromagnetic (AFM) phase. The magnetic order breaks time reversal symmetry, but preserves inversion symmetry. The double degeneracy of the Dirac bands is protected by a combination of inversion, time‐reversal, and an additional translation operation. Moreover, the calculations show that a deviation of the magnetic moments from thec‐axis leads to the breaking of C3 rotation symmetry, and thus, a small bandgap opens at the Dirac point in the bulk. In this case, the system hosts a novel state containing three different types of topological insulator: axion insulator, AFM topological crystalline insulator (TCI), and higher order topological insulator. The results provide an enlarged platform for the quest of topological Dirac fermions in a magnetic system.

     
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