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In genomic analysis, the major computation bottle- neck is the memory- and compute-intensive DNA short reads alignment due to memory-wall challenge. This work presents the first Resistive RAM (RRAM) based Compute-in-Memory (CIM) macro design for accelerating state-of-the-art BWT based genome sequencing alignment. Our design could support all the core instructions, i.e., XNOR based match, count, and addition, required by alignment algorithm. The proposed CIM macro implemented in integration of HfO2 RRAM and 65nm CMOS demonstrates the best energy efficiency to date with 2.07 TOPS/W and 2.12G suffixes/J at 1.0V. 

RRAM-based in-memory computing (IMC) effectively accelerates deep neural networks (DNNs) and other machine learning algorithms. On the other hand, in the presence of RRAM device variations and lower precision, the mapping of DNNs to RRAM-based IMC suffers from severe accuracy loss. In this work, we propose a novel hybrid IMC architecture that integrates an RRAM-based IMC macro with a digital SRAM macro using a programmable shifter to compensate for the RRAM variations and recover the accuracy. The digital SRAM macro consists of a small SRAM memory array and an array of multiply-and-accumulate (MAC) units. The non-ideal output from the RRAM macro, due to device and circuit non-idealities, is compensated by adding the precise output from the SRAM macro. In addition, the programmable shifter allows for different scales of compensation by shifting the SRAM macro output relative to the RRAM macro output. On the algorithm side, we develop a framework for the training of DNNs to support the hybrid IMC architecture through ensemble learning. The proposed framework performs quantization (weights and activations), pruning, RRAM IMC-aware training, and employs ensemble learning through different compensation scales by utilizing the programmable shifter. Finally, we design a silicon prototype of the proposed hybrid IMC architecture in the 65nm SUNY process to demonstrate its efficacy. Experimental evaluation of the hybrid IMC architecture shows that the SRAM compensation allows for a realistic IMC architecture with multi-level RRAM cells (MLC) even though they suffer from high variations. The hybrid IMC architecture achieves up to 21.9%, 12.65%, and 6.52% improvement in post-mapping accuracy over state-of-the-art techniques, at minimal overhead, for ResNet-20 on CIFAR-10, VGG-16 on CIFAR-10, and ResNet-18 on ImageNet, respectively. 

Abstract We present a novel deep neural network (DNN) training scheme and resistive RAM (RRAM) in-memory computing (IMC) hardware evaluation towards achieving high accuracy against RRAM device/array variations and enhanced robustness against adversarial input attacks. We present improved IMC inference accuracy results evaluated on state-of-the-art DNNs including ResNet-18, AlexNet, and VGG with binary, 2-bit, and 4-bit activation/weight precision for the CIFAR-10 dataset. These DNNs are evaluated with measured noise data obtained from three different RRAM-based IMC prototype chips. Across these various DNNs and IMC chip measurements, we show that our proposed hardware noise-aware DNN training consistently improves DNN inference accuracy for actual IMC hardware, up to 8% accuracy improvement for the CIFAR-10 dataset. We also analyze the impact of our proposed noise injection scheme on the adversarial robustness of ResNet-18 DNNs with 1-bit, 2-bit, and 4-bit activation/weight precision. Our results show up to 6% improvement in the robustness to black-box adversarial input attacks.