Search for: All records

Abstract Single crystal Ge is a semiconductor that has broad applications, especially in manipulation of infrared light. Diamond machining enables the efficient production of surfaces with tolerances required by the optical industry. During machining of anisotropic single crystals, the cutting direction with respect to the in-plane lattice orientation plays a fundamental role in the final quality of the surface and subsurface. In this study, on-axis face turning experiments were performed on an undoped (111)Ge wafer to investigate the effects of crystal anisotropy and feedrate on the surface and subsurface conditions. Atomic force microscopy and scanning white light interferometry were used to characterize the presence of brittle fracture on the machined surfaces and to evaluate the resultant surface roughness. Raman spectroscopy was performed to evaluate the residual stresses and lattice disorder induced by the tool during machining. Nanoindentation with Berkovich and cube corner indenter tips was performed to evaluate elastic modulus, hardness, and fracture toughness of the machined surfaces and to study their variations with feedrate and cutting direction. Post-indentation studies of selected indentations were also performed to characterize the corresponding quasi-plasticity mechanisms. It was found that an increase of feedrate produced a rotation of the resultant force imparted by the tool indicating a shift from indentation-dominant to cutting-dominant behavior. Fracture increased with the feedrate and showed a higher propensity when the cutting direction belonged to the <112¯> family. 

Advanced measurement techniques and high-performance computing have made large data sets available for a range of turbulent flows in engineering applications. Drawing on this abundance of data, dynamical models that reproduce structural and statistical features of turbulent flows enable effective model-based flow control strategies. This review describes a framework for completing second-order statistics of turbulent flows using models based on the Navier–Stokes equations linearized around the turbulent mean velocity. Dynamical couplings between states of the linearized model dictate structural constraints on the statistics of flow fluctuations. Colored-in-time stochastic forcing that drives the linearized model is then sought to account for and reconcile dynamics with available data (that is, partially known statistics). The number of dynamical degrees of freedom that are directly affected by stochastic excitation is minimized as a measure of model parsimony. The spectral content of the resulting colored-in-time stochastic contribution can alternatively arise from a low-rank structural perturbation of the linearized dynamical generator, pointing to suitable dynamical corrections that may account for the absence of the nonlinear interactions in the linearized model. 

This study investigates the microstructural evolution and mechanical response of sputter-deposited amorphous silicon oxycarbide (SiOC)/crystalline Fe nanolaminates, a single layer SiOC film, and a single layer Fe film subjected to ion implantation at room temperature to obtain a maximum He concentration of 5 at. %. X-ray diffraction and transmission electron microscopy indicated no evidence of implantation-induced phase transformation or layer breakdown in the nanolaminates. Implantation resulted in the formation of He bubbles and an increase in the average size of the Fe grains in the individual Fe layers of the nanolaminates and the single layer Fe film, but the bubble density and grain size were found to be smaller in the former. By reducing the thicknesses of individual layers in the nanolaminates, bubble density and grain size were further decreased. No He bubbles were observed in the SiOC layers of the nanolaminates and the single layer SiOC film. Nanoindentation and scanning probe microscopy revealed an increase in the hardness of both single layer SiOC and Fe films after implantation. For the nanolaminates, changes in hardness were found to depend on the thicknesses of the individual layers, where reducing the layer thickness to 14 nm resulted in mitigation of implantation-induced hardening.