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  1. Abstract

    Magnetic skyrmions are swirling spin structures stabilized typically by the Dyzaloshinskii-Moriya interaction. The existing control of magnetic skyrmions has often relied on the use of an electric current, which may cause overheating in densely packed devices. Here we demonstrate, using phase-field simulations, that an isolated Néel skyrmion in a magnetic nanodisk can be repeatedly created and deleted by voltage-induced strains from a juxtaposed piezoelectric. Such a skyrmion switching is non-volatile, and consumes only ~0.5 fJ per switching which is about five orders of magnitude smaller than that by current-induced spin-transfer-torques. It is found that the strain-mediated skyrmion creation occurs through an intermediate vortex-like spin structure, and that the skyrmion deletion occurs though a homogenous shrinkage during which the Néel wall is temporarily transformed to a vortex-wall. These findings are expected to stimulate experimental research into strain-mediated voltage control of skyrmions, as well as other chiral spin structures for low-power spintronics.

     
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  2. The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.

     
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