Metal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p+n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm2under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm2is maintained at 1.3 V versus RHE for 7 days.
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Abstract -
Zou, Xingli ; Ji, Li ; Ge, Jianbang ; Sadoway, Donald R. ; Yu, Edward T. ; Bard, Allen J. ( , Nature Communications)
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Siegler, Timothy D. ; Zhang, Yangning ; Dolocan, Andrei ; Reimnitz, Lauren C. ; Torabi, Aida ; Abney, Michael K. ; Choi, Junho ; Cossio, Gabriel ; Houck, Daniel W. ; Yu, Edward T. ; et al ( , ACS Applied Energy Materials)