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Spin Photovoltaic Effect in Magnetic van der Waals Heterostructures

https://doi.org/10.1126/sciadv.abg8094

Tiancheng Song, Eric Anderson (September 2021, Science advances)

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Giant nonreciprocal second-harmonic generation from antiferromagnetic bilayer CrI3

https://doi.org/10.1038/s41586-019-1445-3

Sun, Zeyuan; Yi, Yangfan; Song, Tiancheng; Clark, Genevieve; Huang, Bevin; Shan, Yuwei; Wu, Shuang; Huang, Di; Gao, Chunlei; Chen, Zhanghai; et al (August 2019, Nature)

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Atomically Thin CrCl ₃ : An In-Plane Layered Antiferromagnetic Insulator

https://doi.org/10.1021/acs.nanolett.9b01317

Cai, Xinghan; Song, Tiancheng; Wilson, Nathan P.; Clark, Genevieve; He, Minhao; Zhang, Xiaoou; Taniguchi, Takashi; Watanabe, Kenji; Yao, Wang; Xiao, Di; et al (April 2019, Nano Letters)

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Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction

https://doi.org/10.1021/acs.nanolett.8b04160

Song, Tiancheng; Tu, Matisse Wei-Yuan; Carnahan, Caitlin; Cai, Xinghan; Taniguchi, Takashi; Watanabe, Kenji; McGuire, Michael A.; Cobden, David H.; Xiao, Di; Yao, Wang; et al (January 2019, Nano Letters)

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Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures

https://doi.org/10.1126/science.aar4851

Song, Tiancheng; Cai, Xinghan; Tu, Matisse Wei-Yuan; Zhang, Xiaoou; Huang, Bevin; Wilson, Nathan P.; Seyler, Kyle L.; Zhu, Lin; Taniguchi, Takashi; Watanabe, Kenji; et al (June 2018, Science)

Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI 3 ) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI 3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI 3 . Our work reveals the possibility to push magnetic information storage to the atomically thin limit and highlights CrI 3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.
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