NSF PAR Search | NSF Public Access Repository

Note: When clicking on a Digital Object Identifier (DOI) number, you will be taken to an external site maintained by the publisher. Some full text articles may not yet be available without a charge during the embargo (administrative interval).
What is a DOI Number?

Some links on this page may take you to non-federal websites. Their policies may differ from this site.

Tungsten-doped Ge ₂ Sb ₂ Te ₅ phase change material for high-speed optical switching devices

https://doi.org/10.1063/1.5142552

Guo, Pengfei; Burrow, Joshua A.; Sevison, Gary A.; Kwon, Heungdong; Perez, Christopher; Hendrickson, Joshua R.; Smith, Evan M.; Asheghi, Mehdi; Goodson, Kenneth E.; Agha, Imad; et al (March 2020, Applied Physics Letters)
null (Ed.)
Full Text Available
Phase Change Dynamics and Two-Dimensional 4-Bit Memory in Ge ₂ Sb ₂ Te ₅ via Telecom-Band Encoding

https://doi.org/10.1021/acsphotonics.9b01456

Sevison, Gary A.; Farzinazar, Shiva; Burrow, Joshua A.; Perez, Christopher; Kwon, Heungdong; Lee, Jaeho; Asheghi, Mehdi; Goodson, Kenneth E.; Sarangan, Andrew; Hendrickson, Joshua R.; et al (January 2020, ACS Photonics)

Full Text Available
Understanding the switching mechanism of interfacial phase change memory

https://doi.org/10.1063/1.5093907

Okabe, Kye L.; Sood, Aditya; Yalon, Eilam; Neumann, Christopher M.; Asheghi, Mehdi; Pop, Eric; Goodson, Kenneth E.; Wong, H. -S. Philip (May 2019, Journal of Applied Physics)
Optical and electrical properties of phase change materials for high-speed optoelectronics

https://doi.org/10.1364/CLEO_SI.2019.SF2O.5

Burrow, Joshua A.; Guo, Pengfei; Sevison, Gary A.; Kwon, Heungdong; Perez, Christopher; Asheghi, Mehdi; Hendrickson, Joshua R.; Sarangan, Andrew; Goodson, Kenneth E.; Agha, Imad (January 2019, Conference on Lasers and Electro-Optics)

By doping Ge2Sb2Te5 phase change material with tungsten,we produce material with improved electrical properties while simultaneously maintaining the optical contrast necessary for light modulation and switching.
more » « less
Full Text Available
Improving the performance of Ge ₂ Sb ₂ Te ₅ materials via nickel doping: Towards RF-compatible phase-change devices

https://doi.org/10.1063/1.5053713

Guo, Pengfei; Burrow, Joshua A.; Sevison, Gary A.; Sood, Aditya; Asheghi, Mehdi; Hendrickson, Joshua R.; Goodson, Kenneth E.; Agha, Imad; Sarangan, Andrew (October 2018, Applied Physics Letters)

Search for: All records