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Abstract Heat transport in nanoscale carbon materials such as carbon nanotubes and graphene is normally dominated by phonons. Here, measurements of in‐plane thermal conductivity, electrical conductivity, and thermopower are presented from 77–350 K on two films with thickness <100 nm formed from semiconducting single‐walled carbon nanotubes. These measurements are made with silicon–nitride membrane thermal isolation platforms. The two films, formed from disordered networks of tubes with differing tube and bundle size, have very different thermal conductivity. One film matches a simple model of heat conduction assuming constant phonon velocity and mean free path, and 3D Debye heat capacity with a Debye temperature of 770 K. The second film shows a more complicated temperature dependence, with a dramatic drop in a relatively narrow window near 200 K where phonon contributions to thermal conductivity essentially vanish. This causes a corresponding large increase in thermoelectric figure‐of‐merit at the same temperature. A better understanding of this behavior can allow significant improvement in thermoelectric efficiency of these low‐cost earth‐abundant, organic electronic materials. Heat and charge conductivity near room temperature is also presented as a function of doping, which provides further information on the interaction of dopant molecules and phonon transport in disordered nanotube films. 

The anomalous Nernst effect, which generates an out-of-plane charge voltage in response to a thermal gradient perpendicular to the magnetization of a ferromagnet, can play a significant role in many spintronic devices where large thermal gradients exist. Since they typically include features deep within the submicron regime, nonlocal spin valves can be made very sensitive to this effect by lowering the substrate thermal conductance. Here, we use nonlocal spin valves suspended on thin silicon nitride membranes to determine the temperature dependence of the anomalous Nernst coefficient of 35 nm thick permalloy (Ni80Fe20) from 78 K to 300 K. In a device with a simple ferromagnet geometry, the transverse Seebeck coefficient shows a weak temperature dependence, with values at all T near 2.5 μV/K. Assuming previously measured values of the Seebeck coefficient for permalloy, which has a near-linear dependence on T, leads to a low temperature upturn in the anomalous Nernst coefficient RN. We also show that the temperature dependence of this coefficient is different when a constricted nanowire is used as the ferromagnetic detector element.