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Atomically thin polycrystalline transition-metal dichalcogenides (TMDs) are relevant to both fundamental science investigation and applications. TMD thin-films present uniquely difficult challenges to effective nanoscale crystalline characterization. Here we present a method to quickly characterize the nanocrystalline grain structure and texture of monolayer WS₂films using scanning nanobeam electron diffraction coupled with multivariate statistical analysis of the resulting data. Our analysis pipeline is highly generalizable and is a useful alternative to the time consuming, complex, and system-dependent methodology traditionally used to analyze spatially resolved electron diffraction measurements.

 

Ruddleson–Popper (RP) perovskites have emerged as a class of material inheriting the superior optoelectronic properties of two materials: perovskites and 2D materials. The large exciton binding energy and natural quantum well structure not only make these materials ideal platforms to study light–matter interactions but also render them suitable for fabrication of various functional optoelectronic devices. Nanoscale structuring and morphology control have led to semiconductors with enhanced functionalities. Nanowires of semiconducting materials are extensively used for important applications like lasing and sensing. However, catalyst and template‐free scalable growth of nanowires of 2D perovskites has remained elusive. In this paper, a facile approach for morphology‐controlled growth of nanowires of 2D perovskite, (BA)₂PbI₄, is demonstrated. Additionally, it is shown that the photoluminescence (PL) from the nanowires is highly polarized with a polarization ratio as large as ≈0.73, which is one of the largest reported for perovskites. It is further shown that the photocurrent from the hybrid nanowire/graphene device is also sensitive to the polarization of the incident light with the photocurrent anisotropy ratio of ≈3.62 (much larger than the previously reported value of 2.68 for perovskites), thus demonstrating the potential of these nanowires as highly efficient photodetectors for polarized light.

 

Abstract The discovery of interaction-driven insulating and superconducting phases in moiré van der Waals heterostructures has sparked considerable interest in understanding the novel correlated physics of these systems. While a significant number of studies have focused on twisted bilayer graphene, correlated insulating states and a superconductivity-like transition up to 12 K have been reported in recent transport measurements of twisted double bilayer graphene. Here we present a scanning tunneling microscopy and spectroscopy study of gate-tunable twisted double bilayer graphene devices. We observe splitting of the van Hove singularity peak by ~20 meV at half-filling of the conduction flat band, with a corresponding reduction of the local density of states at the Fermi level. By mapping the tunneling differential conductance we show that this correlated system exhibits energetically split states that are spatially delocalized throughout the different regions in the moiré unit cell, inconsistent with order originating solely from onsite Coulomb repulsion within strongly-localized orbitals. We have performed self-consistent Hartree-Fock calculations that suggest exchange-driven spontaneous symmetry breaking in the degenerate conduction flat band is the origin of the observed correlated state. Our results provide new insight into the nature of electron-electron interactions in twisted double bilayer graphene and related moiré systems. 

Achieving large-size two-dimensional (2D) crystals is key to fully exploiting their remarkable functionalities and application potentials. Chemical vapor deposition growth of 2D semiconductors such as monolayer MoS 2 has been reported to be activated by halide salts, for which various investigations have been conducted to understand the underlying mechanism from different aspects. Here, we provide experimental evidence showing that the MoS 2 growth dynamics are halogen dependent through the Brønsted-Evans-Polanyi relation, based on which we build a growth model by considering MoS 2 edge passivation by halogens, and theoretically reproduce the trend of our experimental observations. These mechanistic understandings enable us to further optimize the fast growth of MoS 2 and reach record-large domain sizes that should facilitate practical applications.