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β-(Al _0.18 Ga _0.82 ) ₂ O ₃ /Ga ₂ O ₃ Double Heterojunction Transistor With Average Field of 5.5 MV/cm

https://doi.org/10.1109/LED.2021.3072052

Kalarickal, Nidhin Kurian; Xia, Zhanbo; Huang, Hsien-Lien; Moore, Wyatt; Liu, Yumo; Brenner, Mark; Hwang, Jinwoo; Rajan, Siddharth (June 2021, IEEE Electron Device Letters)

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High electron density β -(Al _0.17 Ga _0.83 ) ₂ O ₃ /Ga ₂ O ₃ modulation doping using an ultra-thin (1 nm) spacer layer

https://doi.org/10.1063/5.0005531

Kalarickal, Nidhin Kurian; Xia, Zhanbo; McGlone, Joe F.; Liu, Yumo; Moore, Wyatt; Arehart, Aaron R.; Ringel, Steven A.; Rajan, Siddharth (June 2020, Journal of Applied Physics)
Zhang Y., Krishnamoorthy S., Rajan S. (2020) Field-Effect Transistors 3. In: Higashiwaki M., Fujita S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham

Zhang Y., Krishnamoorthy S. (April 2020, Springer series in materials science)

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Metal/BaTiO ₃ /β-Ga ₂ O ₃ dielectric heterojunction diode with 5.7 MV/cm breakdown field

https://doi.org/10.1063/1.5130669

Xia, Zhanbo; Chandrasekar, Hareesh; Moore, Wyatt; Wang, Caiyu; Lee, Aidan J.; McGlone, Joe; Kalarickal, Nidhin Kurian; Arehart, Aaron; Ringel, Steven; Yang, Fengyuan; et al (December 2019, Applied Physics Letters)

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Identification of critical buffer traps in Si δ-doped β-Ga ₂ O ₃ MESFETs

https://doi.org/10.1063/1.5118250

McGlone, Joe F.; Xia, Zhanbo; Joishi, Chandan; Lodha, Saurabh; Rajan, Siddharth; Ringel, Steven; Arehart, Aaron R. (October 2019, Applied Physics Letters)

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$$\beta$$ -Ga ₂ O ₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

https://doi.org/10.1109/LED.2019.2920366

Xia, Zhanbo; Xue, Hao; Joishi, Chandan; Mcglone, Joe; Kalarickal, Nidhin Kurian; Sohel, Shahadat H.; Brenner, Mark; Arehart, Aaron; Ringel, Steven; Lodha, Saurabh; et al (July 2019, IEEE Electron Device Letters)

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