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Tunable topological phase transition in the telecommunication wavelength

https://doi.org/10.1364/OME.487619

Tian, Fanglin ; Zhou, Junxiao ; Wang, Qiang ; Liu, Zhaowei ( May 2023 , Optical Materials Express)

Recent progress in the Valley Hall insulator has demonstrated a nontrivial topology property due to the distinct valley index in 2D semiconductor systems. In this work, we propose a highly tunable topological phase transition based on valley photonic crystals. The topological phase transition is realized by the inversion symmetry broken due to the refractive index change of structures consisting of optical phase change material (OPCM) with thermal excitation of different sites in a honeycomb lattice structure. Besides, simulations of light propagation at sharp corners and pseudo-spin photon coupling are conducted to quantitatively examine the topological protection. Compared with other electro-optical materials based on reconfigurable topological photonics, a wider bandwidth and greater tunability of both central bandgap frequency and topological phase transition can happen in the proposed scheme. Our platform has great potential in practical applications in lasing, light sensing, and high-contrast tunable optical filters.

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Nonlinear Computational Edge Detection Metalens

https://doi.org/10.1002/adfm.202204734

Zhou, Junxiao ; Zhao, Junxiang ; Wu, Qianyi ; Chen, Ching‐Fu ; Lei, Ming ; Chen, Guanghao ; Tian, Fanglin ; Liu, Zhaowei ( August 2022 , Advanced Functional Materials)

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Influence of Hafnium Defects on the Optical and Structural Properties of Zirconium Nitride

https://doi.org/10.1002/pssr.202100372

Bopp, Steven Edward ; Qian, Haoliang ; Liu, Zhaowei ( August 2021 , physica status solidi (RRL) – Rapid Research Letters)

Recently, the application of transition metal mononitrides (TMNs) to plasmonics and nonlinear optics has grown at an astounding rate. TiN and ZrN have emerged as the dominating materials in this direction. However, even though ZrN is reported to have lower dielectric losses and enhanced tunability in plasmonic applications when compared with TiN, the body of work regarding TiN is much more mature than that of ZrN. This imbalance of work regarding ZrN may be in part an effect of pollution in precursor materials for the fabrication of ZrN, leading to an increased imaginary part of permittivity and frustration in reproduction of ZrN with literature‐like properties. Herein, the effects of Hf defects (a common pollutant in Zr) on the optical properties of nitride films grown with radio frequency (RF) magnetron sputtering are reported. Hf defects are introduced into nitride films with a sputtering target made of the Hf‐polluted “grade 702” Zr alloy. Hf defects are found in all analyzed films with concentrations at around ≈0.5−1 at %. Chemical, structural, and optical properties of RF magnetron‐sputtered Hf_x:Zr_yN_zfilms (x ≪ y,z) are characterized and discussed.

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