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e report the on-wafer characterization of S-parameters and microwave noise temperature (T50) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 and 300 K and over a range of drain-source voltages (VDS). From these data, we extract a small-signal model (SSM) and the drain (output) noise current power spectral density (Sid) at each bias and temperature. This procedure enables Sid to be obtained while accounting for the variation of SSM, noise impedance match, and other parameters under the various conditions. We find that the noise associated with the channel conductance can only account for a portion of the measured output noise. Considering the variation of output noise with physical temperature and bias and prior studies of microwave noise in quantum wells, we hypothesize that a hot electron noise source (NS) based on real-space transfer (RST) of electrons from the channel to the barrier could account for the remaining portion of Sid. We suggest further studies to gain insights into the physical mechanisms. Finally, we calculate that the minimum HEMT noise temperature could be reduced by up to ∼50% and ∼30% at cryogenic temperature and room temperature, respectively, if the hot electron noise were suppressed. 

The fundamental limits of the microwave noise performance of high electron-mobility transistors (HEMTs) are of scientific and practical interest for applications in radio astronomy and quantum computing. Self-heating at cryogenic temperatures has been reported to be a limiting mechanism for the noise, but cryogenic cooling strategies to mitigate it, for instance, using liquid cryogens, have not been evaluated. Here, we report microwave noise measurements of a packaged two-stage amplifier with GaAs metamorphic HEMTs immersed in normal and superfluid [Formula: see text]He baths and in vacuum from 1.6 to 80 K. We find that these liquid cryogens are unable to mitigate the thermal noise associated with self-heating. Considering this finding, we examine the implications for the lower bounds of cryogenic noise performance in HEMTs. Our analysis supports the general design principle for cryogenic HEMTs of maximizing gain at the lowest possible power. 

We report wafer characterization of the S-parameters and microwave noise temperature of discrete GaAs and GaN HEMTs over a temperature range of 20 - 300 K. The measured noise temperature (T50) exhibits a dependence on physical temperature that is inconsistent with a constant drain temperature, with Td for the GaAs and GaN devices changing from ~ 2000 K and ~2800 K at room temperature to ~ 700 K and ~ 1800 K at cryogenic temperatures, respectively. The observed temperature dependence is qualitatively consistent with that predicted from a theory of drain noise based on real-space transfer of electrons from the channel to the barrier. 

High electron mobility transistors are widely used as microwave amplifiers owing to their low microwave noise figure. Electronic noise in these devices is typically modeled by noise sources at the gate and drain. While consensus exists regarding the origin of the gate noise, that of drain noise is a topic of debate. Here, we report a theory of drain noise as a type of partition noise arising from real-space transfer of hot electrons from the channel to the barrier. The theory accounts for the magnitude and dependencies of the drain temperature and suggests strategies to realize devices with lower noise figure.