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High quality dielectric‐semiconductor interfaces are critical for reliable high‐performance transistors. This paper reports the in situ metal–organic chemical vapor deposition of Al₂O₃on β‐Ga₂O₃as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al₂O₃is performed in the same reactor as Ga₂O₃using trimethylaluminum and O₂as precursors without breaking the vacuum at a growth temperature of 600 °C. The fast and slow near interface traps at the Al₂O₃/β‐Ga₂O₃interface are identified and quantified using stressed capacitance–voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (D_it) are measured using ultraviolet‐assisted CV technique. The average D_itfor the MOSCAP is determined to be 6.4×10¹¹cm⁻²eV⁻¹. The conduction band offset of the Al₂O₃/ Ga₂O₃interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al₂O₃/Ga₂O₃interface. The current–voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV cm⁻¹. This in situ Al₂O₃dielectric on β‐Ga₂O₃with improved dielectric properties can enable Ga₂O₃‐based high‐performance devices.