Heterostructures obtained from layered assembly of 2D materials such as graphene and hexagonal boron nitride have potential in the development of new electronic devices. Whereas various materials techniques can now produce macroscopic scale graphene, the construction of similar size heterostructures with atomically clean interfaces is still unrealized. A primary barrier has been the inability to remove polymeric residues from the interfaces that arise between layers when fabricating heterostructures. Here, the interface cleaning problem of polymer‐contaminated heterostructures is experimentally studied from an energy viewpoint. With this approach, it is established that the interface cleaning mechanism involves a combination of thermally activated polymer residue mobilization and their mechanical actuation. This framework allows a systematic approach for fabricating record large‐area clean heterostructures from polymer‐contaminated graphene. These heterostructures provide state‐of‐the‐art electronic performance. This study opens new strategies for the scalable production of layered materials heterostructures.
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Huang, Zhujun ; Alharbi, Abdullah ; Mayer, William ; Cuniberto, Edoardo ; Taniguchi, Takashi ; Watanabe, Kenji ; Shabani, Javad ; Shahrjerdi, Davood ( , Nature Communications)
Abstract The proliferation of van der Waals (vdW) heterostructures formed by stacking layered materials can accelerate scientific and technological advances. Here, we report a strategy for constructing vdW heterostructures through the interface engineering of the exfoliation substrate using a sub-5 nm polymeric film. Our construction method has two main features that distinguish it from existing techniques. First is the consistency of its exfoliation process in increasing the yield and in producing large (>10,000 μm2) monolayer graphene. Second is the applicability of its layer transfer process to different layered materials without requiring a specialized stamp—a feature useful for generalizing the assembly process. We demonstrate vdW graphene devices with peak carrier mobility of 200,000 and 800,000 cm2V−1s−1at room temperature and 9 K, respectively. The simplicity of our construction method and its versatility to different layered materials may open doors for automating the fabrication process of vdW heterostructures.
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Cuniberto, Edoardo ; Alharbi, Abdullah ; Wu, Ting ; Huang, Zhujun ; Sardashti, Kasra ; You, Kae-Dyi ; Kisslinger, Kim ; Taniguchi, Takashi ; Watanabe, Kenji ; Kiani, Roozbeh ; et al ( , Scientific Reports)
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You, Kae-Dyi ; Cuniberto, Edoardo ; Hsu, Shao-Cheng ; Wu, Bohan ; Huang, Zhujun ; Pei, Xiaochang ; Shahrjerdi, Davood ( , IEEE Transactions on Biomedical Circuits and Systems)