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Using an aluminum gallium arsenide microring resonator, we demonstrate a bright quantum optical microcomb with >300 nm (>40 THz) bandwidth and more than 20 sets of time–energy entangled modes, enabling spectral demultiplexing with simple, off-the-shelf commercial telecom components. We report high-rate continuous entanglement distribution for two sets of entangled-photon pair frequency modes exhibiting up to 20 GHz/mW²pair generation rate. As an illustrative example of entanglement distribution, we perform a continuous-wave time-bin quantum key distribution protocol with 8 kbps sifted key rates while maintaining less than 10% error rate and sufficient two-photon visibility to ensure security of the channel. When the >20 frequency modes are multiplexed, we estimate >100 kbps entanglement-based key rates or the creation of a multi-user quantum communications network. The entire system requires less than 110 µW of on-chip optical power, demonstrating an efficient source of entangled frequency modes for quantum communications. As a proof of principle, a quantum key is distributed across 12 km of deployed fiber on the University of California Santa Barbara (UCSB) campus and used to encrypt a 21 kB image with <9% error.

 

Integrated photonics provides a powerful approach for developing compact, stable, and scalable architectures for the generation, manipulation, and detection of quantum states of light. To this end, several material platforms are being developed in parallel, each providing its specific assets, and hybridization techniques to combine their strengths are available. This review focuses on AlGaAs, a III–V semiconductor platform combining a mature fabrication technology, direct band-gap compliant with electrical injection, low-loss operation, large electro-optic effect, and compatibility with superconducting detectors for on-chip detection. We detail recent implementations of room-temperature sources of quantum light based on the high second- and third-order optical nonlinearities of the material, as well as photonic circuits embedding various functionalities ranging from polarizing beamsplitters to Mach–Zehnder interferometers, modulators, and tunable filters. We then present several realizations of quantum state engineering enabled by these recent advances and discuss open perspectives and remaining challenges in the field of integrated quantum photonics with AlGaAs.

 

Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large [Formula: see text] and [Formula: see text] optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical building blocks for chip-scale quantum photonic circuits. Here we expand the quantum photonic toolbox for AlGaAsOI by demonstrating edge couplers, 3 dB splitters, tunable interferometers, and waveguide crossings with performance comparable to or exceeding silicon and silicon-nitride quantum photonic platforms. As a demonstration, we de-multiplex photonic qubits through an unbalanced interferometer, paving the route toward ultra-efficient and high-rate chip-scale demonstrations of photonic quantum computation and information applications.